FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SCTWA35N65G2V-4 DISCRETE STMicroelectronics	600	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+18V, -5V	1370 pF @ 400 V	-	240W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-247-4
NTHL030N120M3S SILICON CARBIDE (SIC) MOSFET EL onsemi	351	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	73A (Tc)	18V	39mOhm @ 30A, 18V	4.4V @ 15mA	107 nC @ 18 V	+22V, -10V	2430 pF @ 800 V	-	313W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IMW65R033M2HXKSA1 IMW65R033M2HXKSA1 Infineon Technologies	369	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	53A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1214 pF @ 400 V	-	194W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
TSM60NE048PW C0G MOSFET Taiwan Semiconductor Corporation	300	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61A (Tc)	10V, 12V	44mOhm @ 20A, 12V	6V @ 4.6mA	114 nC @ 10 V	±30V	5023 pF @ 300 V	-	431W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
AOM065V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	62.3 nC @ 15 V	+18V, -8V	1716 pF @ 800 V	-	187.5W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
IMT40R015M2HXTMA1 SIC-MOS Infineon Technologies	1,942	-	RFQ	Datasheet	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	5.6V @ 9.7mA	62 nC @ 18 V	+23V, -7V	2730 pF @ 200 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
GAN039-650NTBJ GAN CASCODE FETS Nexperia USA Inc.	948	-	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	58.5A (Ta)	10V	39mOhm @ 32A, 10V	4.6V @ 1mA	26 nC @ 10 V	±20V	1980 pF @ 400 V	-	250W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	CCPAK1212i
R6086YNZ4C13 NCH 600V 86A, TO-247, POWER MOSF Rohm Semiconductor	521	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	86A (Tc)	10V, 12V	44mOhm @ 17A, 12V	6V @ 4.6mA	110 nC @ 10 V	±30V	5100 pF @ 100 V	-	781W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247G
IPDQ60R016CM8XTMA1 IPDQ60R016CM8XTMA1 Infineon Technologies	720	-	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	135A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
SCT3080KRHRC15 1200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	440	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IPDQ60R022S7AXTMA1 MOSFET Infineon Technologies	750	-	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	24A (Tc)	12V	22mOhm @ 23A, 12V	4.5V @ 1.44mA	150 nC @ 12 V	±20V	5640 pF @ 300 V	-	416W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22-1
NVHL060N090SC1 SICFET N-CH 900V 46A TO247-3 onsemi	383	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V	84mOhm @ 20A, 15V	4.3V @ 5mA	87 nC @ 15 V	+19V, -10V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
SCT3060ARHRC15 650V, 39A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	446	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	39A (Tc)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
NSF080120L4A0Q NSF080120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	446	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	15V, 18V	120mOhm @ 20A, 15V	2.9V @ 2mA	52 nC @ 15 V	+22V, -10V	1335 pF @ 800 V	-	183W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
AIMZA75R040M1HXKSA1 IGBT Infineon Technologies	229	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	44A (Tj)	15V, 20V	37mOhm @ 16.6A, 20V	5.6V @ 6mA	34 nC @ 18 V	+23V, -5V	1135 pF @ 500 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
IMZA65R033M2HXKSA1 IMZA65R033M2HXKSA1 Infineon Technologies	390	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	53A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1214 pF @ 400 V	-	194W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8
IMBG40R015M2HXTMA1 SIC-MOS Infineon Technologies	939	-	RFQ	Datasheet	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	5.6V @ 9.7mA	62 nC @ 18 V	+23V, -7V	2730 pF @ 200 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-11
SCT3060ARC15 650V, 39A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	427	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	39A (Tj)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W	175°C (TJ)	-	-	Through Hole	TO-247-4L
SCT3080KRC15 1200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	365	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tj)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W	175°C (TJ)	-	-	Through Hole	TO-247-4L
NVHL040N65S3HF SUPERFER3 FRFET AUTOMOTIVE 40MOH onsemi	430	-	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	65A (Tc)	10V	40mOhm @ 32.5A, 10V	5V @ 2.1mA	157 nC @ 10 V	±30V	6655 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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