FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AOM065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	62.3 nC @ 15 V	+15V, -5V	1716 pF @ 800 V	-	187.5W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+22V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
C3M0075120K1 MOSFET N-CH 1200V 32A TO247-4L Wolfspeed, Inc.	345	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	32A (Tc)	15V	97.5mOhm @ 17.9A, 15V	3.8V @ 5mA	55 nC @ 15 V	+19V, -8V	1480 pF @ 1000 V	-	145W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
SICW080N120Y4-BP N-CHANNEL MOSFET,TO-247-4 Micro Commercial Co	338	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A	18V	85mOhm @ 20A, 18V	3.6V @ 5mA	41 nC @ 18 V	+22V, -8V	890 pF @ 1000 V	-	223W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
NVH4L032N065M3S SIC MOS TO247-4L 32MOHM 650V M3S onsemi	422	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	50A (Tc)	15V, 18V	44mOhm @ 15A, 18V	4V @ 7.5mA	55 nC @ 18 V	+22V, -8V	1410 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
IMDQ75R027M1HXUMA1 IMDQ75R027M1HXUMA1 Infineon Technologies	708	-	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+20V, -2V	1668 pF @ 500 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
NVH4L070N120M3S SILICON CARBIDE (SIC) MOSFET-ELI onsemi	222	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	18V	87mOhm @ 15A, 18V	4.4V @ 7mA	57 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
PJMK040N60EC_T0_00201 600V/ 40M / 71A/ EASY TO DRIVER Panjit International Inc.	690	-	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK065V65X2 MOSFET N-CH 650V 40.3A TO247 Alpha & Omega Semiconductor Inc.	225	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	58.8 nC @ 15 V	+15V, -5V	1762 pF @ 400 V	-	187.5W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
DIW170SIC070 SIC MOSFET, TO-247-3L, N, 70A, 1 Diotec Semiconductor	150	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1700 V	70A (Tc)	20V	22.3mOhm @ 40A, 20V	4V @ 10mA	80 nC @ 18 V	+20V, -5V	6000 pF @ 1200 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
IPQC60R017S7XTMA1 MOSFET Infineon Technologies	750	-	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
IPDQ60R017S7XTMA1 MOSFET Infineon Technologies	695	-	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
SIHG64N65E-GE3 MOSFET N-CH 650V 64A TO247AC Vishay Siliconix	481	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	64A (Tc)	10V	47mOhm @ 32A, 10V	4V @ 250µA	369 nC @ 10 V	±30V	7497 pF @ 100 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
SCT4026DWATL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	946	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	51A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	-	175°C (TJ)	-	-	Surface Mount	TO-263-7LA
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies	1,183	-	RFQ	Datasheet	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7
AOK065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	62.3 nC @ 15 V	+15V, -5V	1716 pF @ 800 V	-	187.5W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
NVH4L040N65S3F MOSFET N-CH 650V 65A TO247-4 onsemi	448	-	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	65A (Tc)	-	40mOhm @ 32.5A, 10V	5V @ 2.1mA	160 nC @ 10 V	±30V	5665 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
G3F40MT12J-TR 1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	59A (Tc)	18V	53mOhm @ 20A, 18V	4.3V @ 16mA	86 nC @ 18 V	+22V, -10V	2023 pF @ 800 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
E4M0045075K1 MOSFETS AUTOMOTIVE 139W 3.8V NC Wolfspeed, Inc.	254	-	RFQ	Datasheet	E	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	42A (Tc)	15V	60mOhm @ 17.6A, 15V	3.8V @ 4.84mA	65 nC @ 15 V	+19V, -8V	1606 pF @ 500 V	-	139W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IMW65R026M2HXKSA1 IMW65R026M2HXKSA1 Infineon Technologies	390	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	64A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.