FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IMTA65R020M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	371	-	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4026DWAHRTL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	980	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	51A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	-	175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7LA
C3M0040120K1 MOSFET N-CH 1200V 57A TO247-4L Wolfspeed, Inc.	283	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A (Tc)	15V	53mOhm @ 31.9A, 15V	3.8V @ 8.377mA	94 nC @ 15 V	+19V, -8V	2726 pF @ 1000 V	-	242W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
FCH029N65S3-F155 MOSFET N-CH 650V 75A TO247-3 onsemi	399	-	RFQ	Datasheet	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	-	29mOhm @ 37.5A, 10V	4.5V @ 7mA	201 nC @ 10 V	±30V	6340 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IMW65R020M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	163	-	RFQ	Datasheet	CoolSiC™ Gen 2	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	83A (Tc)	15V, 20V	18mOhm @ 46.9A, 20V	5.6V @ 9.5mA	57 nC @ 18 V	+23V, -7V	2038 pF @ 400 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
IXFX120N30P3 MOSFET N-CH 300V 120A PLUS247-3 Littelfuse Inc.	240	-	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	120A (Tc)	10V	27mOhm @ 60A, 10V	5V @ 4mA	150 nC @ 10 V	±20V	8630 pF @ 25 V	-	1130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
IMBG40R011M2HXTMA1 SIC-MOS Infineon Technologies	1,000	-	RFQ	Datasheet	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	13.4A (Ta), 133A (Tc)	15V, 18V	14.4mOhm @ 37.1A, 18V	5.6V @ 13.3mA	85 nC @ 18 V	+23V, -7V	3770 pF @ 200 V	-	3.8W (Ta), 429W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-11
NTH4L018N075SC1 SIC MOS TO247-4L 750V onsemi	400	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	140A (Tc)	15V, 18V	18mOhm @ 66A, 18V	4.3V @ 22mA	262 nC @ 18 V	+22V, -8V	5010 pF @ 375 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
NVH4L060N090SC1 - onsemi	1,349	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V, 18V	84mOhm @ 20A, 15V	4.3V @ 5mA	87 nC @ 15 V	+22V, -8V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
NVH4L045N065SC1 SIC MOS TO247-4L 650V onsemi	422	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22V, -8V	1870 pF @ 325 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
SCTW60N120G2 DISCRETE STMicroelectronics	600	-	RFQ	Datasheet	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	60A (Tc)	18V	52mOhm @ 30A, 18V	5V @ 1mA	94 nC @ 8 V	+18V, -5V	1969 pF @ 800 V	-	389W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	HiP247™
AIMZA75R027M1HXKSA1 IGBT Infineon Technologies	216	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	60A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
IPDQ60R020CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	750	-	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	112A (Tc)	10V	20mOhm @ 42.4A, 10V	4.5V @ 2.12mA	186 nC @ 10 V	±20V	7395 pF @ 400 V	-	543W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
SICW025N120H-BP SIC MOSFET,TO-247AB Micro Commercial Co	360	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	86A (Tc)	20V	33mOhm @ 40A, 20V	4.5V @ 50mA	305 nC @ 20 V	+25V, -10V	4909 pF @ 800 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AB
IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1 Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	80A (Tc)	15V, 18V	22mOhm @ 32A, 18V	5.1V @ 10.1mA	71 nC @ 18 V	+23V, -7V	2330 pF @ 800 V	-	329W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
SICW025N120H4-BP SIC MOSFET,TO-247-4 Micro Commercial Co	350	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	86A (Tc)	20V	33mOhm @ 40A, 20V	4.5V @ 50mA	305 nC @ 20 V	+20V, -5V	4909 pF @ 800 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
STWA65N023M9 N-CHANNEL 650 V, 19.9 MOHM TYP., STMicroelectronics	626	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	95A (Tc)	10V	23mOhm @ 48A, 10V	4.2V @ 250µA	230 nC @ 10 V	±30V	8844 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads
C3M0120100J-TR SIC, MOSFET, 120M, 1000V, TO-263 Wolfspeed, Inc.	780	-	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1000 V	22A (Tc)	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	18 nC @ 15 V	+15V, -4V	414 pF @ 600 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK-7
E3M0075120J2-TR 75m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	498	-	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	15V	97.5mOhm @ 17.9A, 15V	3.8V @ 5mA	52 nC @ 15 V	+19V, -8V	1480 pF @ 1000 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
C3M0060065J-TR SIC, MOSFET, 60M, 650V, TO-263-7 Wolfspeed, Inc.	409	-	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	36A (Tc)	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	46 nC @ 15 V	+15V, -4V	1020 pF @ 600 V	-	136W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.