PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AUIRF1404STRL Infineon Technologies

AUIRF1404STRL

MOSFET_(20V,40V)

Infineon Technologies

800 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
BTS114AE3045ANTMA1 Infineon Technologies

BTS114AE3045ANTMA1

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies

12,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active - - - - - - - - - - - - - - - Surface Mount PG-TO220-3-5
2SK3353-AZ Renesas

2SK3353-AZ

2SK3353 - N-CHANNEL POWER MOSFET

Renesas

3,289 -
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 82A (Tc) 4V, 10V 9.5mOhm @ 41A, 10V 2.5V @ 1mA 90 nC @ 10 V ±20V 4650 pF @ 10 V - 1.5W (Ta), 95W (Tc) 150°C - - Through Hole TO-220AB
RJK0601DPN-E0#T2 Renesas

RJK0601DPN-E0#T2

RJK0601DPN - N-CHANNEL MOSFET 60

Renesas

1,640 -
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 110A (Ta) 10V 3.1mOhm @ 55A, 10V 4V @ 1mA 141 nC @ 10 V ±20V 10000 pF @ 10 V - 200W (Tc) 150°C - - Through Hole TO-220ABS
2SK2498-AZ Renesas

2SK2498-AZ

2SK2498 - SWITCHING N-CHANNEL PO

Renesas

414 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 4V, 10V 9mOhm @ 25A, 10V 2V @ 1mA 152 nC @ 10 V ±20V 3400 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C - - Through Hole ITO-220AB
FCP170N60 Fairchild Semiconductor

FCP170N60

MOSFET N-CH 600V 22A TO220-3

Fairchild Semiconductor

800 -
Datasheet SuperFET® II TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPC313N10N3RX1SA2 Infineon Technologies

IPC313N10N3RX1SA2

TRENCH >=100V

Infineon Technologies

7,784 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
EMB1426QMME/NOPB Texas Instruments

EMB1426QMME/NOPB

EMB1426 - HALF BRIDGE BASED MOSF

Texas Instruments

500 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
AM90N10-07B Analog Power Inc.

AM90N10-07B

MOSFET N-CH 100V 90A TO-263

Analog Power Inc.

200 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 5.5V, 10V 7mOhm @ 45A, 10V 1V @ 250µA 114 nC @ 5.5 V ±20V 9235 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263
2SK3354-AZ Renesas

2SK3354-AZ

2SK3354-AZ - SWITCHING N-CHANNEL

Renesas

956 -
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 83A (Tc) 4V, 10V 8mOhm @ 42A, 10V 2.5V @ 1mA 106 nC @ 10 V ±20V 6300 pF @ 10 V - 1.5W (Ta), 100W (Tc) 150°C - - Through Hole TO-220AB
FCH25N60N Fairchild Semiconductor

FCH25N60N

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

4,502 -
Datasheet SupreMOS™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 126mOhm @ 12.5A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 3352 pF @ 100 V - 216W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
FL06250G fastSiC

FL06250G

SICFET N-CH 650V 10.7A PDFN8x8

fastSiC

300 -
Datasheet Lightning 4-PowerTSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 10.7A (Tc) 15V 330mOhm @ 3A, 15V 2V @ 6mA 18.2 nC @ 12 V 15V 436 pF @ 400 V - 46.8W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 4-PDFN (8x8)
RQA0002DNSTB-E Renesas

RQA0002DNSTB-E

RQA0002DNS - N CHANNEL MOSFET

Renesas

9,270 -
Datasheet - 3-DFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16 V 3.8A (Ta) - - 750mV @ 1mA - ±5V 102 pF @ 0 V - 15W (Tc) 150°C - - Surface Mount 2-HWSON (5x4)
GPI65008DF68 GaNPower

GPI65008DF68

GaNFET N-CH 650V 8A DFN6x8

GaNPower

990 -
Datasheet - - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 8A 6V - 1.7V @ 3.5mA 2.1 nC @ 6 V +7.5V, -12V 63 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
2SK3357-A Renesas

2SK3357-A

2SK3357 - N-CHANNEL POWER MOSFET

Renesas

294 -
Datasheet - TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Ta) 4V, 10V 5.8mOhm @ 38A, 10V 2.5V @ 1mA 170 nC @ 10 V ±20V 9800 pF @ 10 V - 3W (Ta), 150W (Tc) 150°C - - Through Hole TO-3P (MP-88)
AC3M0120065K APSEMI

AC3M0120065K

SIC MOSFET N-CH 650V 23A TO247-4

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 23A 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA - +19V, -8V - - 98W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0075120K APSEMI

AC3M0075120K

SIC MOSFET N-CH 1200V 33A TO247-

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 33A 15V 90mOhm @ 20A, 15V 3.6V @ 5mA - +19V, -8V - - 136W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC2M0080120D APSEMI

AC2M0080120D

SIC MOSFET N-CH 1200V 37A TO247-

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A 20V 98mOhm @ 20A, 20V 4V @ 5mA - +25V, -10V - - 129W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0120065D APSEMI

AC3M0120065D

SIC MOSFET N-CH 650V 23A TO247-3

APSEMI

2,000

1+:$4.97000

10+:$4.64100

60+:$3.71267

240+:$3.01325

450+:$2.51104

900+:$2.31016

Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 23A 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA - +19V, -8V - - 98W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0120090D APSEMI

AC3M0120090D

SIC MOSFET N-CH 900V 24A TO247-3

APSEMI

990

1+:$4.97000

10+:$4.64100

60+:$3.71267

240+:$3.01325

450+:$2.51104

900+:$2.31016

Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 24A 15V 155mOhm @ 15A, 15V 3.5V @ 3mA - +19V, -8V - - 97W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
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FETs, MOSFETs FAQ

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