FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NP110N055PUJ-E1B-AY NP110N055PUJ-E1B-AY - SWITCHINGN Renesas	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	2.4mOhm @ 55A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	14250 pF @ 25 V	-	1.8W (Ta), 288W (Tc)	175°C	-	-	Surface Mount	TO-263-3
QS1700SCM8 1700v 8AMP SiC Mosfet Quest Semi	2,500	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	8A	20V	100mOhm @ 2A, 20V	4V @ 10mA	16 nC @ 1200 V	-	142 pF @ 1000 V	-	88W	-55°C ~ 175°C	Automotive	-	Through Hole	PG-TO247-3
RJL5014DPP-E0#T2 RJL5014DPP-E0#T2 - SILICON N CHA Renesas	2,240	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	19A (Ta)	10V	400mOhm @ 9.5A, 10V	4V @ 1mA	43 nC @ 10 V	±30V	1700 pF @ 25 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220FP
AUIRF1404 AUIRF1404 - 20V-40V N-CHANNEL AU International Rectifier	24,709	-	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	10V	4mOhm @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	5669 pF @ 25 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AUIRF1404 AUIRF1404 - 20V-40V N-CHANNEL AU Infineon Technologies	9,000	-	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	10V	4mOhm @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	5669 pF @ 25 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
GC041N65QF MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	3,000	-	RFQ	Datasheet	-	TO-247-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	70A (Tc)	10V	43mOhm @ 20A, 10V	5V @ 250µA	160 nC @ 10 V	±30V	7668 pF @ 400 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
AC3M0045065D SIC MOSFET N-CH 650V 50A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	-	+19V, -8V	-	-	176W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0045065K SIC MOSFET N-CH 650V 50A TO247-4 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	-	+19V, -8V	-	-	176W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0040120K SIC MOSFET N-CH 1200V 67A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	67A	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.2mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC2M0040120D SIC MOSFET N-CH 1200V 57A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A	20V	52mOhm @ 40A, 20V	4V @ 10mA	-	+25V, -10V	-	-	278W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0040120D SIC MOSFET N-CH 1200V 67A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	67A	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.5mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0032120D SIC MOSFET N-CH 1200V 64A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	64A	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	-	+19V, -8V	-	-	283W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0065090D SIC MOSFET N-CH 900V 37A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	37A	15V	78mOhm @ 20A, 15V	3.5V @ 5mA	-	+19V, -8V	-	-	125W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0065100K SIC MOSFET N-CH 1000V 33A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1000 V	33A	15V	78mOhm @ 20A, 15V	3.5V @ 5mA	-	+19V, -8V	-	-	113.5W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-4
AC3M0032120K SIC MOSFET N-CH 1200V 64A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	64A	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	-	+19V, -8V	-	-	283W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
FL06100G SICFET N-CH 650V 22A PDFN8x8 fastSiC	300	-	RFQ	Datasheet	Lightning	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	22A (Tc)	15V	100mOhm @ 10A, 15V	1.5V @ 14mA	51 nC @ 12 V	15V	1129 pF @ 400 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	4-PDFN (8x8)
FF06100FA SICFET N-CH 650V 23.5A TOLL fastSiC	300	-	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	23.5A (Tc)	18V	100mOhm @ 10A, 18V	2.5V @ 14mA	43 nC @ 15 V	18V	1000 pF @ 400 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL
FF06100J-7 SICFET N-CH 650V 20.6A TO-263-7L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20.6A (Tc)	18V	100mOhm @ 10A, 18V	2.2V @ 14mA	43 nC @ 15 V	18V	1000 pF @ 400 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7L
QS120SCM80D2P 1200V N-CHANNEL SIC MOSFET 80 M Quest Semi	1,000	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	20V	100mOhm @ 20A, 20V	3.8V @ 5mA	60 nC @ 20 V	+25V, -10V	1001 pF @ 800 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7L
FCH041N65F-F085 MOSFET N-CH 650V 76A TO247-3 Fairchild Semiconductor	163	-	RFQ	Datasheet	SuperFET® II	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	76A (Tc)	10V	41mOhm @ 38A, 10V	5V @ 250µA	304 nC @ 10 V	±20V	13566 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247

FETs, MOSFETs FAQ

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