FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FCH041N65EFL4 POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor	232	-	RFQ	Datasheet	FRFET®, SuperFET® II	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	76A (Tc)	10V	41mOhm @ 38A, 10V	5V @ 7.6mA	298 nC @ 10 V	±20V	12560 pF @ 100 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0025065K SIC MOSFET N-CH 650V 74A TO247-4 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	74A	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0030090K SIC MOSFET N-CH 900V 74A TO247-4 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	74A	15V	39mOhm @ 35A, 15V	3.5V @ 11mA	-	+19V, -8V	-	-	240W	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
AC2M0025120D SIC MOSFET N-CH 1200V 92A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	92A	20V	34mOhm @ 50A, 20V	4V @ 15mA	-	+25V, -10V	-	-	378W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0025065D SIC MOSFET N-CH 650V 98A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	98A	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
FF06060J-7A SICFET N-CH 650V 44A TO-263-7L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	44A (Tc)	18V	80mOhm @ 15A, 18V	2.5V @ 20mA	69 nC @ 15 V	18V	1499 pF @ 400 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7L
FF06060FA SICFET N-CH 650V 44A TOLL fastSiC	300	-	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	44A (Tc)	18V	80mOhm @ 15A, 18V	2.5V @ 20mA	69 nC @ 15 V	18V	1499 pF @ 400 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
FF07075FA SICFET N-CH 750V 36A TOLL fastSiC	300	-	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	36A (Tc)	18V	95mOhm @ 10A, 18V	2.5V @ 20mA	70 nC @ 15 V	+18V, -8V	1564 pF @ 500 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TOLL
FF07075J-7A SICFET N-CH 750V 36A TO-263-7L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	36A (Tc)	18V	95mOhm @ 10A, 18V	2.5V @ 20mA	70 nC @ 15 V	+18V, -8V	1564 pF @ 500 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-263-7L
FF06060QA SICFET N-CH 650V 43A TO-247-4L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	43A (Tc)	18V	80mOhm @ 15A, 18V	2.5V @ 20mA	69 nC @ 15 V	+18V, -8V	1499 pF @ 400 V	-	202W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	-	TO-247-4L
FF06060E-3A SICFET N-CH 650V 43A TO-247-3L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	43A (Tc)	18V	80mOhm @ 15A, 18V	2.5V @ 20mA	69 nC @ 15 V	+18V, -8V	1499 pF @ 400 V	-	202W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	-	TO-247-3L
FF07075QA SICFET N-CH 750V 34A TO-247-4L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	34A (Tc)	18V	95mOhm @ 10A, 18V	2.5V @ 20mA	70 nC @ 15 V	+18V, -8V	1564 pF @ 500 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF07075E-3A SICFET N-CH 750V 34A TO-247-3L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	34A (Tc)	18V	95mOhm @ 10A, 18V	2.5V @ 20mA	70 nC @ 15 V	+18V, -8V	1564 pF @ 500 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-3L
AC3M0021120K SIC MOSFET N-CH 1200V 102A TO247 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	102A (Tc)	15V	28.8mOhm @ 50A, 15V	3.6V @ 17.7mA	-	+19V, -8V	-	-	469W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0021120D SIC MOSFET N-CH 1200V 117A TO247 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	82A	15V	28.8mOhm @ 50A, 15V	3.6V @ 17.7mA	-	+19V, -8V	-	-	469W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
FF12080J-7A SICFET N-CH 1200V 31A TO-263-7L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	112mOhm @ 8A, 18V	2.5V @ 20mA	73 nC @ 15 V	18V	1548 pF @ 800 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7L
NC1M120C75GTNG SiC MOSFET N 1200V 75mohm 47A 3 NovuSem	2,400	-	RFQ	Datasheet	NC1M	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	47A (Tc)	20V	75mOhm @ 20A, 20V	2.8V @ 5mA	-	+20V, -5V	1450 pF @ 1000 V	-	288W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3L
FCH76N60NF POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	4,950	-	RFQ	Datasheet	SupreMOS™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	72.8A (Tc)	10V	38mOhm @ 38A, 10V	5V @ 250µA	300 nC @ 10 V	±30V	11045 pF @ 100 V	-	543W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
FF12080QA SICFET N-CH 1200V 29A TO-247-4L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	29A (Tc)	18V	112mOhm @ 8A, 18V	2.5V @ 20mA	73 nC @ 15 V	+18V, -8V	1548 pF @ 800 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF12080E-3A SICFET N-CH 1200V 29A TO-247-3L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	29A (Tc)	18V	112mOhm @ 8A, 18V	2.5V @ 20mA	73 nC @ 15 V	+18V, -8V	1548 pF @ 800 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-3L

FETs, MOSFETs FAQ

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You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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