FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXTH1N200P3 MOSFET N-CH 2000V 1A TO247 IXYS	31	-	RFQ	Datasheet	Polar P3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2000 V	1A (Tc)	10V	40Ohm @ 500mA, 10V	4V @ 250µA	23.5 nC @ 10 V	±20V	646 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
MSC035SMA070B MOSFET N-CH 700V TO247 Microchip Technology	85	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	77A (Tc)	20V	44mOhm @ 30A, 20V	2.7V @ 2mA	99 nC @ 20 V	+25V, -10V	2010 pF @ 700 V	-	283W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXTA02N250HV MOSFET N-CH 2500V 200MA TO263AB Littelfuse Inc.	44	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
IXFH12N100F MOSFET N-CH 1000V 12A TO247AD Littelfuse Inc.	24	-	RFQ	Datasheet	HiPerFET™, F Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	12A (Tc)	10V	1.05Ohm @ 6A, 10V	5.5V @ 4mA	77 nC @ 10 V	±20V	2700 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IMZ120R030M1HXKSA1 SICFET N-CH 1.2KV 56A TO247-4 Infineon Technologies	88	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	40mOhm @ 25A, 18V	5.7V @ 10mA	63 nC @ 18 V	+23V, -7V	2120 pF @ 800 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-1
IXFN140N30P MOSFET N-CH 300V 110A SOT-227B Littelfuse Inc.	85	-	RFQ	Datasheet	HiPerFET™, Polar	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	110A (Tc)	10V	24mOhm @ 70A, 10V	5V @ 8mA	185 nC @ 10 V	±20V	14800 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IMBG120R012M2HXTMA1 SIC DISCRETE Infineon Technologies	31	-	RFQ	Datasheet	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	144A (Tc)	15V, 18V	12.2mOhm @ 56.7A, 18V	5.1V @ 17.8mA	124 nC @ 18 V	+23V, -10V	4050 pF @ 800 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12
VS-FC420SA15 MOSFET N-CH 150V 400A SOT227 Vishay General Semiconductor - Diodes Division	54	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	2.75mOhm @ 200A, 10V	5.4V @ 1mA	250 nC @ 10 V	±20V	13700 pF @ 25 V	-	909W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
UJ4SC075009B7S 750V/9MOHM, N-OFF SIC STACK CASC Qorvo	48	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	106A (Tc)	12V	11.5mOhm @ 70A, 12V	5.5V @ 10mA	75 nC @ 15 V	±20V	3340 pF @ 400 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7
IXFK240N25X3 MOSFET N-CH 250V 240A TO264 Littelfuse Inc.	92	-	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	5mOhm @ 120A, 10V	4.5V @ 8mA	345 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
IXTH24N50L MOSFET N-CH 500V 24A TO247 Littelfuse Inc.	68	-	RFQ	Datasheet	Linear	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	24A (Tc)	20V	300mOhm @ 500mA, 20V	5V @ 250µA	160 nC @ 20 V	±30V	2500 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXTX200N10L2 MOSFET N-CH 100V 200A PLUS247-3 Littelfuse Inc.	6	-	RFQ	Datasheet	Linear L2™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	11mOhm @ 100A, 10V	4.5V @ 3mA	540 nC @ 10 V	±20V	23000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
NVH4L018N075SC1 SIC MOS TO247-4L 750V onsemi	62	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	140A (Tc)	15V, 18V	18mOhm @ 66A, 18V	4.3V @ 22mA	262 nC @ 18 V	+22V, -8V	5010 pF @ 375 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
MSC035SMA170B MOSFET SIC 1700 V 45 MOHM TO-247 Microchip Technology	37	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	68A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	370W (Tc)	-60°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
MSC040SMA120J SICFET N-CH 1200V 53A SOT227 Microchip Technology	50	-	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	53A (Tc)	20V	50mOhm @ 40A, 20V	2.8V @ 1mA	137 nC @ 20 V	+25V, -10V	1990 pF @ 1000 V	-	208W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
IXFN300N10P MOSFET N-CH 100V 295A SOT227B Littelfuse Inc.	70	-	RFQ	Datasheet	HiPerFET™, Polar	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	295A (Tc)	10V	5.5mOhm @ 50A, 10V	5V @ 8mA	279 nC @ 10 V	±20V	23000 pF @ 25 V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B
MSC035SMA170B4 MOSFET SIC 1700V 35 MOHM TO-247- Microchip Technology	90	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	68A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT50M65JFLL MOSFET N-CH 500V 58A ISOTOP Microchip Technology	53	-	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	10V	65mOhm @ 29A, 10V	5V @ 2.5mA	141 nC @ 10 V	±30V	7010 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
AIMBG120R010M1XTMA1 SIC_DISCRETE Infineon Technologies	13	-	RFQ	Datasheet	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	187A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	-	-	Surface Mount	PG-TO263-7-12
IMW120R007M1HXKSA1 SIC DISCRETE Infineon Technologies	88	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	225A (Tc)	15V, 18V	9.9mOhm @ 108A, 18V	5.2V @ 47mA	289 nC @ 18 V	+20V, -5V	9170 pF @ 800 V	-	750W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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