PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GS65R030Q4A Goford Semiconductor

GS65R030Q4A

SiC MOSFET N-CH 650V 70A TO-247

Goford Semiconductor

5,000 -
Datasheet TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4L
GS65R045Q4A Goford Semiconductor

GS65R045Q4A

SiC MOSFET N-CH 650V 51A TO-247

Goford Semiconductor

5,000 -
Datasheet TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4L
MT9M131C12STC-MI-DR onsemi

MT9M131C12STC-MI-DR

CMOS IMAGE SENSOR SYSTEM-ON-CHIP

onsemi

3,040 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
AC3M0015065K APSEMI

AC3M0015065K

SIC MOSFET N-CH 650V 122A TO247-

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 122A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA - +19V, -8V - - 416W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0015065D APSEMI

AC3M0015065D

SIC MOSFET N-CH 650V 122A TO247-

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 122A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA - +19V, -8V - - 416W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
GS120R033Q4A Goford Semiconductor

GS120R033Q4A

SiC MOSFET N-CH 1200V 69A TO-24

Goford Semiconductor

5,000 -
Datasheet TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4L
GS120R040Q4 Goford Semiconductor

GS120R040Q4

SiC MOSFET N-CH 1200V 50A TO-24

Goford Semiconductor

5,000 -
Datasheet TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - - - Through Hole TO-247-4L
FF06030Q fastSiC

FF06030Q

SICFET N-CH 650V 65A TO-247-4L

fastSiC

300

1+:$19.39000

10+:$7.10900

100+:$6.62500

600+:$6.46300

Datasheet Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 65A (Tc) 18V 45mOhm @ 30A, 18V 2.2V @ 40mA 125 nC @ 15 V +18V, -8V 3015 pF @ 400 V - 202W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06030J-7A fastSiC

FF06030J-7A

SICFET N-CH 650V 74A TO-263-7L

fastSiC

300 -
Datasheet Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 74A (Tc) 18V 45mOhm @ 30A, 18V 2.5V @ 40mA 125 nC @ 15 V 18V 3015 pF @ 400 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7L
FF06030FA fastSiC

FF06030FA

SICFET N-CH 650V 74A TOLL

fastSiC

300 -
Datasheet Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 74A (Tc) 18V 45mOhm @ 30A, 18V 2.5V @ 40mA 125 nC @ 15 V 18V 3015 pF @ 400 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
FF06030J-7 fastSiC

FF06030J-7

SICFET N-CH 650V 62A TO-263-7L

fastSiC

300 -
Datasheet Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 62A (Tc) 15V, 18V 45mOhm @ 30A, 18V 2.5V @ 40mA (Typ) 125 nC @ 400 V +18V, -8V 3015 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7L
FF07035FA fastSiC

FF07035FA

SICFET N-CH 750V 61A TOLL

fastSiC

300 -
Datasheet Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 61A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 267W (Tc) -55°C ~ 175°C (TJ) - - - TOLL
FF07035J-7A fastSiC

FF07035J-7A

SICFET N-CH 750V 61A TO-263-7L

fastSiC

300 -
Datasheet Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 61A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 267W (Tc) -55°C ~ 175°C (TJ) - - - TO-263-7L
FF07035QA fastSiC

FF07035QA

SICFET N-CH 750V 62A TO-247-4L

fastSiC

300 -
Datasheet Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 62A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 277W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06030QA fastSiC

FF06030QA

SICFET N-CH 650V 75A TO-247-4L

fastSiC

300 -
Datasheet Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 75A (Tc) 18V 45mOhm @ 30A, 18V 2.5V @ 40mA 125 nC @ 15 V +18V, -8V 3015 pF @ 400 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 - TO-247-4L
FF07035E-3A fastSiC

FF07035E-3A

SICFET N-CH 750V 62A TO-247-3L

fastSiC

300 -
Datasheet Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 62A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 277W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-3L
FF06030E-3A fastSiC

FF06030E-3A

SICFET N-CH 650V 75A TO-247-3L

fastSiC

300 -
Datasheet Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 75A (Tc) 15V, 18V 45mOhm @ 30A, 18V 2.2V @ 40mA (Typ) 125 nC @ 400 V +18V, -8V 3015 pF @ 400 V - 278W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
FF12040QA fastSiC

FF12040QA

SICFET N-CH 1200V 54A TO-247-4L

fastSiC

300 -
Datasheet Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 54A (Tc) 18V 56mOhm @ 20A, 18V 2.2V @ 40mA 117 nC @ 15 V +18V, -8V 3129 pF @ 800 V - 278W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
AC3M0016120K APSEMI

AC3M0016120K

SIC MOSFET N-CH 1200V 117A TO247

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 117A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA - +19V, -8V - - 556W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0016120D APSEMI

AC3M0016120D

SIC MOSFET N-CH 1200V 117A TO247

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 117A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA - +19V, -8V - - 556W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
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FETs, MOSFETs FAQ

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