FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AMC3M0040120D SICFET N-CH 1200V 15A TO-247 Analog Power Inc.	750	-	RFQ	Datasheet	*	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	-	15A (Tc)	15V, 20V	40mOhm @ 5A, 10V	2V @ 250µA (Min)	-	±25V	-	-	500W (Tc)	-55°C ~ 155°C (TJ)	-	-	Through Hole	TO-247
AC2M0045170K SIC MOSFET N-CH 1700V 74A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	74A	20V	70mOhm @ 50A, 20V	4V @ 18mA	-	+25V, -10V	-	-	520W	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
AC2M0045170D SIC MOSFET N-CH 1700V 74A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	74A	20V	70mOhm @ 50A, 20V	4V @ 18mA	-	+25V, -10V	-	-	520W	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
FF06020FA SICFET N-CH 650V 101A TOLL fastSiC	300	-	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	101A (Tc)	18V	28mOhm @ 35A, 18V	2.5V @ 60mA	194 nC @ 15 V	18V	4437 pF @ 400 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL
FF06020J-7A SICFET N-CH 650V 101A TO-263-7L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	101A (Tc)	18V	28mOhm @ 35A, 18V	2.5V @ 60mA	194 nC @ 15 V	18V	4437 pF @ 400 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7L
FF07025FA SICFET N-CH 750V 81A TOLL fastSiC	300	-	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	81A (Tc)	18V	34mOhm @ 30A, 18V	2.5V @ 60mA	174 nC @ 15 V	+18V, -8V	4604 pF @ 500 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TOLL
FF07025J-7A SICFET N-CH 750V 81A TO-263-7L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	81A (Tc)	18V	34mOhm @ 30A, 18V	2.5V @ 60mA	174 nC @ 15 V	+18V, -8V	4604 pF @ 500 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-263-7L
FF07025QA SICFET N-CH 750V 89A TO-247-4L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	89A (Tc)	18V	34mOhm @ 30A, 18V	2.5V @ 60mA	174 nC @ 15 V	+18V, -8V	4604 pF @ 500 V	-	405W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06020QA SICFET N-CH 650V 110A TO-247-4L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	110A (Tc)	18V	28mOhm @ 35A, 18V	2.5V @ 60mA	194 nC @ 15 V	+18V, -8V	4437 pF @ 400 V	-	405W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06020E-3A SICFET N-CH 650V 110A TO-247-3L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	110A (Tc)	15V, 18V	28mOhm @ 35A, 18V	2.5V @ 60mA (Typ)	194 nC @ 400 V	+18V, -8V	4437 pF @ 400 V	-	405W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3L
FF07015QA SICFET N-CH 750V 136A TO-247-4L fastSiC	300	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	136A (Tc)	18V	20mOhm @ 50A, 18V	2.5V @ 100mA	329 nC @ 15 V	+18V, -8V	7252 pF @ 500 V	-	555W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06010QA SICFET N-CH 650V 169A TO-247-4L fastSiC	100	-	RFQ	Datasheet	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	169A (Tc)	18V	18mOhm @ 60A, 18V	2.5V @ 100mA	315 nC @ 15 V	+18V, -8V	7390 pF @ 400 V	-	555W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06010E-3A SICFET N-CH 650V 169A TO-247-3L fastSiC	100	-	RFQ	Datasheet	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	169A (Tc)	15V, 18V	18mOhm @ 60A, 18V	2.5V @ 100mA	315 nC @ 400 V	+18V, -8V	7390 pF @ 400 V	-	555W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3L
NC1M120C12HTNG SiC MOSFET N 1200V 12mohm 214A NovuSem	100	-	RFQ	Datasheet	NC1M	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	214A (Tc)	20V	20mOhm @ 100A, 20V	3.5V @ 40mA	-	+20V, -5V	8330 pF @ 1000 V	-	938W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
AMC2M0025120D SICFET N-CH 1200V 20A TO-247 Analog Power Inc.	500	-	RFQ	Datasheet	*	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	-	20A (Tc)	15V, 20V	25mOhm @ 5A, 10V	2V @ 250µA (Min)	-	±25V	-	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	830	-	RFQ	Datasheet	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	1V @ 250µA	5 nC @ 10 V	±20V	85 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23
BSH103,215 MOSFET N-CH 30V 850MA TO236AB Nexperia USA Inc.	681	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	850mA (Ta)	2.5V	400mOhm @ 500mA, 4.5V	400mV @ 1mA (Min)	2.1 nC @ 4.5 V	±8V	83 pF @ 24 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB
SSM6J501NU,LF MOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage	468	-	RFQ	Datasheet	U-MOSVI	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.5V, 4.5V	15.3mOhm @ 4A, 4.5V	1V @ 1mA	29.9 nC @ 4.5 V	±8V	2600 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)
SI4435FDY-T1-GE3 MOSFET P-CH 30V 12.6A 8SOIC Vishay Siliconix	313	-	RFQ	Datasheet	TrenchFET® Gen III	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	12.6A (Tc)	4.5V, 10V	19mOhm @ 9A, 10V	2.2V @ 250µA	42 nC @ 10 V	±20V	1500 pF @ 15 V	-	4.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	244	-	RFQ	Datasheet	U-MOSVIII-H	3-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.8W (Ta)	175°C	-	-	Surface Mount	UFM

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

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