FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
XP202A0003MR-G MOSFET P-CH 30V 3A SOT23 Torex Semiconductor Ltd	71	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5A (Tj)	4V, 10V	45mOhm @ 1.5A, 10V	2.6V @ 1mA	10 nC @ 10 V	±20V	435 pF @ 10 V	-	1W	150°C	-	-	Surface Mount	SOT-23
TK8A25DA,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	32	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	7.5A (Ta)	10V	500mOhm @ 3.8A, 10V	3.5V @ 1mA	16 nC @ 10 V	±20V	550 pF @ 100 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS
FK4B01100LE SINGLE NCH MOSFET 12V, 3.4A, 27M Nuvoton Technology Corporation	1,000	-	RFQ	Datasheet	-	4-XFLGA, CSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.4A (Ta)	1.5V, 4.5V	30mOhm @ 1.5A, 4.5V	1V @ 236µA	5.8 nC @ 4.5 V	±8V	275 pF @ 10 V	-	360mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	4-CSP (0.8x0.8)
TK46A08N1,S4X MOSFET N-CH 80V 46A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	46A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37 nC @ 10 V	±20V	2500 pF @ 40 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A45DA(STA4,Q,M) MOSFET N-CH 450V 4.5A TO220SIS Toshiba Semiconductor and Storage	28	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	4.5A (Ta)	10V	1.75Ohm @ 2.3A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A80E,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	45	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5A (Ta)	10V	2.4Ohm @ 2.5A, 10V	4V @ 500µA	20 nC @ 10 V	±30V	950 pF @ 25 V	-	40W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK2A65D(STA4,Q,M) MOSFET N-CH 650V 2A TO220SIS Toshiba Semiconductor and Storage	99	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	2A (Ta)	10V	3.26Ohm @ 1A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK35E08N1,S1X MOSFET N-CH 80V 55A TO220 Toshiba Semiconductor and Storage	41	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	55A (Tc)	10V	12.2mOhm @ 17.5A, 10V	4V @ 300µA	25 nC @ 10 V	±20V	1700 pF @ 40 V	-	72W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK3A60DA(STA4,Q,M) MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage	42	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.5A (Ta)	10V	2.8Ohm @ 1.3A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK4A80E,S4X PB-FPOWERMOSFETTRANSISTORTO-220S Toshiba Semiconductor and Storage	30	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4A (Ta)	10V	3.5Ohm @ 2A, 10V	4V @ 400µA	15 nC @ 10 V	±30V	650 pF @ 25 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK46E08N1,S1X MOSFET N-CH 80V 80A TO220 Toshiba Semiconductor and Storage	58	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	80A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37 nC @ 10 V	±20V	2500 pF @ 40 V	-	103W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK5A50D(STA4,Q,M) MOSFET N-CH 500V 5A TO220SIS Toshiba Semiconductor and Storage	55	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	490 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5Q65W,S1Q MOSFET N-CH 650V 5.2A IPAK Toshiba Semiconductor and Storage	55	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.2A (Ta)	10V	1.22Ohm @ 2.6A, 10V	3.5V @ 170µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK9A45D(STA4,Q,M) MOSFET N-CH 450V 9A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	9A (Ta)	10V	770mOhm @ 4.5A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
PSMN2R6-80YSFX PSMN2R6-80YSF/SOT1023/4 LEADS Nexperia USA Inc.	57	-	RFQ	Datasheet	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	231A (Ta)	10V	2.4mOhm @ 25A, 10V	4V @ 1mA	127 nC @ 10 V	±20V	8191 pF @ 40 V	-	294W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
TK5A53D(STA4,Q,M) MOSFET N-CH 525V 5A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	525 V	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK6A50D(STA4,Q,M) MOSFET N-CH 500V 6A TO220SIS Toshiba Semiconductor and Storage	30	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	6A (Ta)	10V	1.4Ohm @ 3A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
ISP16DP10LMAXTSA1 ISP16DP10LMAXTSA1 Infineon Technologies	1,000	-	RFQ	Datasheet	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Ta), 3.9A (Tc)	4.5V, 10V	167mOhm @ 2.2A, 10V	2V @ 1.037mA	55 nC @ 10 V	±20V	2100 pF @ 50 V	-	1.8W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4-21
TK6Q65W,S1Q MOSFET N-CH 650V 5.8A IPAK Toshiba Semiconductor and Storage	74	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.8A (Ta)	10V	1.05Ohm @ 2.9A, 10V	3.5V @ 180µA	11 nC @ 10 V	±30V	390 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK3R1E04PL,S1X MOSFET N-CH 40V 100A TO220 Toshiba Semiconductor and Storage	51	-	RFQ	Datasheet	U-MOSIX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	3.8mOhm @ 30A, 4.5V	2.4V @ 500µA	63.4 nC @ 10 V	±20V	4670 pF @ 20 V	-	87W (Tc)	175°C (TJ)	-	-	Through Hole	TO-220

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.