FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK9A55DA(STA4,Q,M) MOSFET N-CH 550V 8.5A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	8.5A (Ta)	10V	860mOhm @ 4.3A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK9A60D(STA4,Q,M) MOSFET N-CH 600V 9A TO220SIS Toshiba Semiconductor and Storage	36	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Ta)	10V	830mOhm @ 4.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK12Q60W,S1VQ MOSFET N CH 600V 11.5A IPAK Toshiba Semiconductor and Storage	59	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11.5A (Ta)	10V	340mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	100W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK12A50W,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	44	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK7Q60W,S1VQ MOSFET N-CH 600V 7A IPAK Toshiba Semiconductor and Storage	75	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	600mOhm @ 3.5A, 10V	3.7V @ 350µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
IRF620STRRPBF MOSFET N-CH 200V 5.2A D2PAK Vishay Siliconix	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	10V	800mOhm @ 3.1A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	3W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
TK7A65D(STA4,Q,M) MOSFET N-CH 650V 7A TO220SIS Toshiba Semiconductor and Storage	40	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Ta)	10V	980mOhm @ 3.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7A80W,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6.5A (Ta)	10V	950mOhm @ 3.3A, 10V	4V @ 280µA	13 nC @ 10 V	±20V	700 pF @ 300 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK6A60W,S4VX MOSFET N-CH 600V 6.2A TO220SIS Toshiba Semiconductor and Storage	40	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Ta)	10V	750mOhm @ 3.1A, 10V	3.7V @ 310µA	12 nC @ 10 V	±30V	390 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK10Q60W,S1VQ MOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage	75	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
DMNH4005SCT MOSFET N-CH 40V 150A TO220AB Diodes Incorporated	30	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	10V	4mOhm @ 20A, 10V	3V @ 250µA	48 nC @ 10 V	20V	2846 pF @ 20 V	-	165W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
TK13A45D(STA4,Q,M) MOSFET N-CH 450V 13A TO220SIS Toshiba Semiconductor and Storage	32	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	13A (Ta)	10V	460mOhm @ 6.5A, 10V	4V @ 1mA	25 nC @ 10 V	±30V	1350 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK8Q60W,S1VQ MOSFET N-CH 600V 8A IPAK Toshiba Semiconductor and Storage	72	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	8A (Ta)	10V	500mOhm @ 4A, 10V	3.7V @ 400µA	18.5 nC @ 10 V	±30V	570 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
DMTH10H005LCT MOSFET N-CH 100V 140A TO220AB Diodes Incorporated	57	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	5mOhm @ 13A, 10V	3.5V @ 250µA	114 nC @ 10 V	±20V	3688 pF @ 50 V	-	187W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220AB
TK8A60W,S4VX MOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage	39	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	8A (Ta)	10V	500mOhm @ 4A, 10V	3.7V @ 400µA	18.5 nC @ 10 V	±30V	570 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IPP339N20NM6AKSA1 MOSFET Infineon Technologies	88	-	RFQ	Datasheet	OptiMOS™ 6	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	6.8A (Ta), 39A (Tc)	10V, 15V	31.8mOhm @ 26A, 15V	4.5V @ 52µA	24 nC @ 10 V	±20V	1600 pF @ 100 V	-	3.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1
DMTH10H005SCT MOSFET N-CH 100V 140A TO220AB Diodes Incorporated	71	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	5mOhm @ 13A, 10V	4V @ 250µA	111.7 nC @ 10 V	±20V	8474 pF @ 50 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
TK16E60W,S1VX MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	68	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK12E60W,S1VX MOSFET N CH 600V 11.5A TO-220 Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	110W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK12A60D(STA4,Q,M) MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage	88	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Ta)	10V	550mOhm @ 6A, 10V	4V @ 1mA	38 nC @ 10 V	±30V	1800 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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