FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FK4B01120LE SINGLE NCH MOSFET, 12V, 3.9A 17M Nuvoton Technology Corporation	1,000	-	RFQ	Datasheet	-	4-XFLGA, CSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.9A (Ta)	1.5V, 4.5V	24mOhm @ 1.5A, 4.5V	1V @ 394µA	7 nC @ 4.5 V	±8V	490 pF @ 10 V	-	370mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	4-CSP (1x1)
TK8A65W,S5X MOSFET N-CH 650V 7.8A TO220SIS Toshiba Semiconductor and Storage	40	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	650mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK560A60Y,S4X MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	560mOhm @ 3.5A, 10V	4V @ 240µA	14.5 nC @ 10 V	±30V	380 pF @ 300 V	-	30W	150°C (TJ)	-	-	Through Hole	TO-220SIS
DMT4003SCT MOSFET N-CH 40V 205A TO220AB Diodes Incorporated	46	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	205A (Tc)	10V	3mOhm @ 90A, 10V	4V @ 250µA	75.6 nC @ 10 V	±20V	6865 pF @ 20 V	-	156W	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
TK5A60D(STA4,Q,M) MOSFET N-CH 600V 5A TO220SIS Toshiba Semiconductor and Storage	41	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK8A45D(STA4,Q,M) MOSFET N-CH 450V 8A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	8A (Ta)	10V	900mOhm @ 4A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7A55D(STA4,Q,M) MOSFET N-CH 550V 7A TO220SIS Toshiba Semiconductor and Storage	45	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	7A (Ta)	10V	1.25Ohm @ 3.5A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK3A65D(STA4,Q,M) MOSFET N-CH 650V 3A TO220SIS Toshiba Semiconductor and Storage	26	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	3A (Ta)	10V	2.25Ohm @ 1.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A65DA(STA4,Q,M) MOSFET N-CH 650V 4.5A TO220SIS Toshiba Semiconductor and Storage	32	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	4.5A (Ta)	10V	1.67Ohm @ 2.3A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A65D(STA4,Q,M) MOSFET N-CH 650V 5A TO220SIS Toshiba Semiconductor and Storage	28	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
STF80N600K6 N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics	26	-	RFQ	Datasheet	ECOPACK®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 100µA	10.7 nC @ 10 V	±30V	540 pF @ 400 V	-	23W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
DMTH4005SCT MOSFET N-CH 40V 100A TO220AB Diodes Incorporated	50	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	4.7mOhm @ 50A, 10V	4V @ 250µA	49.1 nC @ 10 V	±20V	3062 pF @ 20 V	-	2.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220-3
TK11A50D(STA4,Q,M) MOSFET N-CH 500V 11A TO220SIS Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Ta)	10V	600mOhm @ 5.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK56E12N1,S1X MOSFET N CH 120V 56A TO-220 Toshiba Semiconductor and Storage	52	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	56A (Ta)	10V	7mOhm @ 28A, 10V	4V @ 1mA	69 nC @ 10 V	±20V	4200 pF @ 60 V	-	168W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK8Q65W,S1Q MOSFET N-CH 650V 7.8A IPAK Toshiba Semiconductor and Storage	75	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	670mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK8A55DA(STA4,Q,M) MOSFET N-CH 550V 7.5A TO220SIS Toshiba Semiconductor and Storage	48	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	7.5A (Ta)	10V	1.07Ohm @ 3.8A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK18A30D,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	48	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	18A (Ta)	10V	139mOhm @ 9A, 10V	3.5V @ 1mA	60 nC @ 10 V	±20V	2600 pF @ 100 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK11A45D(STA4,Q,M) MOSFET N-CH 450V 11A TO220SIS Toshiba Semiconductor and Storage	43	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	11A (Ta)	10V	620mOhm @ 5.5A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5Q60W,S1VQ MOSFET N CH 600V 5.4A IPAK Toshiba Semiconductor and Storage	75	-	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5.4A (Ta)	10V	900mOhm @ 2.7A, 10V	3.7V @ 270µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK7A60W,S4VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	40	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	600mOhm @ 3.5A, 10V	3.7V @ 350µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

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