FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK10E80W,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	9.5A (Ta)	10V	550mOhm @ 4.8A, 10V	4V @ 450µA	19 nC @ 10 V	±20V	1150 pF @ 300 V	-	130W (Tc)	150°C	-	-	Through Hole	TO-220
TK10A60W,S4VX MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	28	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK10A80W,S4X MOSFET N-CH 800V 9.5A TO220SIS Toshiba Semiconductor and Storage	49	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	9.5A (Ta)	10V	550mOhm @ 4.8A, 10V	4V @ 450µA	19 nC @ 10 V	±20V	1150 pF @ 300 V	-	40W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK7E80W,S1X MOSFET N-CH 800V 6.5A TO220 Toshiba Semiconductor and Storage	70	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6.5A (Ta)	10V	950mOhm @ 3.3A, 10V	4V @ 280µA	13 nC @ 10 V	±20V	700 pF @ 300 V	-	110W (Tc)	150°C	-	-	Through Hole	TO-220
TK14E65W,S1X MOSFET N-CH 650V 13.7A TO220 Toshiba Semiconductor and Storage	48	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	3.5V @ 690µA	35 nC @ 10 V	±30V	1300 pF @ 300 V	-	130W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK20A60W5,S5VX MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage	31	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	175mOhm @ 10A, 10V	4.5V @ 1mA	55 nC @ 10 V	±30V	1800 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK4R9E15Q5,S1X 150V UMOS10-HSD TO-220 4.9MOHM Toshiba Semiconductor and Storage	89	-	RFQ	Datasheet	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	120A (Tc)	8V, 10V	4.9mOhm @ 50A, 10V	4.5V @ 2.2mA	96 nC @ 10 V	±20V	7820 pF @ 75 V	-	300W (Tc)	175°C	-	-	Through Hole	TO-220
TK18A50D(STA4,Q,M) MOSFET N-CH 500V 18A TO220SIS Toshiba Semiconductor and Storage	46	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	18A (Ta)	10V	270mOhm @ 9A, 10V	4V @ 1mA	45 nC @ 10 V	±30V	2600 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IPB240N04S41R0ATMA1 MOSFET N-CH 40V 240A TO263-7 Infineon Technologies	43	-	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	240A (Tc)	10V	1mOhm @ 100A, 10V	4V @ 180µA	221 nC @ 10 V	±20V	17682 pF @ 25 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3
IPI90R500C3XKSA2 MOSFET N-CH 900V 11A TO262-3 Infineon Technologies	83	-	RFQ	Datasheet	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	3.5V @ 740µA	68 nC @ 10 V	±20V	1700 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3-1
TK19A45D(STA4,Q,M) MOSFET N-CH 450V 19A TO220SIS Toshiba Semiconductor and Storage	31	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	19A (Ta)	10V	250mOhm @ 9.5A, 10V	4V @ 1mA	45 nC @ 10 V	±30V	2600 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK080N60Z1,S1F 600V DTMOS6 TO-247 80MOHM Toshiba Semiconductor and Storage	30	-	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Ta)	10V	80mOhm @ 10.3A, 10V	4V @ 1.17mA	43 nC @ 10 V	±30V	2510 pF @ 300 V	-	211W (Tc)	150°C	-	-	Through Hole	TO-247
TK12A60W,S4VX MOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage	79	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK28E65W,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-220
TK25E60X5,S1X MOSFET N-CH 600V 25A TO220 Toshiba Semiconductor and Storage	100	-	RFQ	Datasheet	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	140mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60 nC @ 10 V	±30V	2400 pF @ 300 V	-	180W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK25N60X5,S1F MOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage	76	-	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	140mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60 nC @ 10 V	±30V	2400 pF @ 300 V	-	180W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK20E60W,S1VX MOSFET N-CH 600V 20A TO220 Toshiba Semiconductor and Storage	58	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK110N65Z,S1F POWER MOSFET TRANSISTOR TO-247(O Toshiba Semiconductor and Storage	35	-	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-247
IPA65R110CFDXKSA2 MOSFET N-CH 650V 31.2A TO220 Infineon Technologies	50	-	RFQ	Datasheet	CoolMOS™ CFD2	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	110mOhm @ 12.7A, 10V	4.5V @ 1.3mA	118 nC @ 10 V	±20V	3240 pF @ 100 V	-	34.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
TK28N65W,S1F MOSFET N-CH 650V 27.6A TO247 Toshiba Semiconductor and Storage	70	-	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

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