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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1SS196(TE85L,F) Toshiba Semiconductor and Storage

1SS196(TE85L,F)

DIODE GEN PURP 80V 100MA SC59-3

Toshiba Semiconductor and Storage

2 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Standard 80 V 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 3pF @ 0V, 1MHz - - Surface Mount SC-59-3 125°C (Max)
1SS397TE85LF Toshiba Semiconductor and Storage

1SS397TE85LF

DIODE GEN PURP 400V 100MA SC70

Toshiba Semiconductor and Storage

6,818 -
Datasheet - SC-70, SOT-323 Tape & Reel (TR) Active Standard 400 V 100mA 1.3 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 500 ns 1 µA @ 400 V 5pF @ 0V, 1MHz - - Surface Mount SC-70 125°C (Max)
CMF04(TE12L,Q,M) Toshiba Semiconductor and Storage

CMF04(TE12L,Q,M)

DIODE GEN PURP 800V 500MA M-FLAT

Toshiba Semiconductor and Storage

7,611 -
Datasheet - SOD-128 Tape & Reel (TR) Active Standard 800 V 500mA 2.5 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 800 V - - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
TRS3E65F,S1Q Toshiba Semiconductor and Storage

TRS3E65F,S1Q

DIODE SIL CARB 650V 3A TO220-2L

Toshiba Semiconductor and Storage

9,681 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 3A 1.6 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 12pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS4E65F,S1Q Toshiba Semiconductor and Storage

TRS4E65F,S1Q

DIODE SIL CARB 650V 4A TO220-2L

Toshiba Semiconductor and Storage

9,142 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.6 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 16pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS8E65F,S1Q Toshiba Semiconductor and Storage

TRS8E65F,S1Q

DIODE SIL CARB 650V 8A TO220-2L

Toshiba Semiconductor and Storage

8,401 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 28pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS10E65F,S1Q Toshiba Semiconductor and Storage

TRS10E65F,S1Q

DIODE SIL CARB 650V 10A TO220-2L

Toshiba Semiconductor and Storage

3,742 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 36pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS10A65F,S1Q Toshiba Semiconductor and Storage

TRS10A65F,S1Q

DIODE SIL CARB 650V 10A TO220F

Toshiba Semiconductor and Storage

4,007 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 36pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
TRS4A65F,S1Q Toshiba Semiconductor and Storage

TRS4A65F,S1Q

DIODE SIL CARBIDE 650V 4A TO220F

Toshiba Semiconductor and Storage

4,029 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.6 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 16pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
TRS12E65F,S1Q Toshiba Semiconductor and Storage

TRS12E65F,S1Q

DIODE SIL CARB 650V 12A TO220-2L

Toshiba Semiconductor and Storage

5,715 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 65pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
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Single Diodes FAQ

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