PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STPS20SM100ST STMicroelectronics

STPS20SM100ST

DIODE SCHOTTKY 100V 20A TO220

STMicroelectronics

887 -
Datasheet - TO-220-3 Tube Active Schottky 100 V 20A 900 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 100 V - - - Through Hole TO-220 150°C (Max)
CBS05F30,L3F Toshiba Semiconductor and Storage

CBS05F30,L3F

DIODE SCHOTTKY 30V 500MA CST2B

Toshiba Semiconductor and Storage

9,981 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 30 V 500mA - Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 118pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
VS-E5TX3012-M3 Vishay General Semiconductor - Diodes Division

VS-E5TX3012-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

7,970 -
Datasheet FRED Pt® TO-220-2 Tube Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
DSEI25-06A IXYS

DSEI25-06A

DIODE GEN PURP 600V 25A TO220-2

IXYS

2,072 -
Datasheet - TO-220-2 Tube Active Standard 600 V 25A 1.31 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V 20pF @ 400V, 1MHz - - Through Hole TO-220-2 -40°C ~ 150°C
RB078BGE30STL Rohm Semiconductor

RB078BGE30STL

DIODE SCHOTTKY 30V 5A TO252GE

Rohm Semiconductor

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 5A 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - - - Surface Mount TO-252GE 150°C
RFN20TF6SFHC9 Rohm Semiconductor

RFN20TF6SFHC9

DIODE GEN PURP 600V 20A TO220NFM

Rohm Semiconductor

458 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220NFM 150°C (Max)
S3D06065I SMC Diode Solutions

S3D06065I

DIODE SIL CARB 650V 6A TO220

SMC Diode Solutions

891 -
Datasheet - TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Through Hole TO-220-Isolation -55°C ~ 175°C
RFN10NS3STL Rohm Semiconductor

RFN10NS3STL

DIODE GEN PURP 350V 10A LPDS

Rohm Semiconductor

975 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 10A 1.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
RFUH20TJ6SGC9 Rohm Semiconductor

RFUH20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

635 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C
1N4938-1 Microchip Technology

1N4938-1

DIODE GEN PURP 175V 100MA DO35

Microchip Technology

369 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
FFSD0665A onsemi

FFSD0665A

DIODE SIL CARBIDE 650V 11A DPAK

onsemi

2,396 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-EPH3006LHN3 Vishay General Semiconductor - Diodes Division

VS-EPH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

180 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
S3D06065E SMC Diode Solutions

S3D06065E

DIODE SIL CARBIDE 650V 6A DPAK

SMC Diode Solutions

682 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PX3006L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PX3006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

636 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
TPMR10J S1G Taiwan Semiconductor Corporation

TPMR10J S1G

DIODE GEN PURP 600V 10A TO277A

Taiwan Semiconductor Corporation

2,672 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V 140pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
UJ3D06512TS Qorvo

UJ3D06512TS

DIODE SIL CARB 650V 12A TO220-2

Qorvo

10,601 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX1512S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TX1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

694 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 3.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 77.5 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STPSC6H065D STMicroelectronics

STPSC6H065D

DIODE SIL CARB 650V 6A TO220AC

STMicroelectronics

958 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
VS-C4PU6006L-N3 Vishay General Semiconductor - Diodes Division

VS-C4PU6006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

500 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
SCS302AHGC9 Rohm Semiconductor

SCS302AHGC9

DIODE SIC 650V 2.15A TO220ACP

Rohm Semiconductor

643 -
Datasheet - TO-220-2 Tube Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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