PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division

VS-E5TX3012S2L-M3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,540 -
Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
S3D08065A SMC Diode Solutions

S3D08065A

DIODE SIL CARB 650V 23A TO220AC

SMC Diode Solutions

1,438 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 23A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 51 µA @ 650 V 661pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
FFSP1065B onsemi

FFSP1065B

DIODE SIL CARB 650V 11A TO220-2

onsemi

628 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 11A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-EPU6006-N3 Vishay General Semiconductor - Diodes Division

VS-EPU6006-N3

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

475 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
IDL06G65C5XUMA2 Infineon Technologies

IDL06G65C5XUMA2

DIODE SIL CARBIDE 650V 6A VSON-4

Infineon Technologies

2,908 -
Datasheet CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
FFSP0665A onsemi

FFSP0665A

DIODE SIL CARB 650V 8.8A TO220L

onsemi

688 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8.8A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Through Hole TO-220-2L -55°C ~ 175°C
DSI30-12AS-TUB IXYS

DSI30-12AS-TUB

DIODE GEN PURP 1.2KV 30A TO263AA

IXYS

1,195 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1200 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
FFSD0865B onsemi

FFSD0865B

DIODE SIL CARB 650V 11.6A DPAK

onsemi

148 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SCS302AJTLL Rohm Semiconductor

SCS302AJTLL

DIODE SIL CARB 650V 2.15A LPTL

Rohm Semiconductor

499 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2.15 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
VS-10ETF10FP-M3 Vishay General Semiconductor - Diodes Division

VS-10ETF10FP-M3

DIODE GP 1KV 10A TO220-2FP

Vishay General Semiconductor - Diodes Division

442 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 1000 V 10A 1.33 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 310 ns 100 µA @ 1000 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-E5TH2112S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TH2112S2LHM3

20A, 1200V, "H" SERIES GEN 5 FRE

Vishay General Semiconductor - Diodes Division

850 -
Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 20A 2.66 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-E5PH3006LHN3 Vishay General Semiconductor - Diodes Division

VS-E5PH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

878 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 46 ns 20 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E5PX3006LHN3 Vishay General Semiconductor - Diodes Division

VS-E5PX3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

490 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
APT40DQ120SG Microchip Technology

APT40DQ120SG

DIODE GEN PURP 1.2KV 40A D3PAK

Microchip Technology

958 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 1200 V 40A 3.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 100 µA @ 1200 V - - - Surface Mount D3PAK -55°C ~ 175°C
VS-E5TH1512S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TH1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

815 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 2.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-E5PH6006L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PH6006L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

705 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.7 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 54 ns 25 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
S4D04120E SMC Diode Solutions

S4D04120E

DIODE SIL CARBIDE 1.2KV 4A DPAK

SMC Diode Solutions

1,787 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 4A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PW6006LHN3 Vishay General Semiconductor - Diodes Division

VS-E5PW6006LHN3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

1,535 -
Datasheet FRED Pt® Gen 5 TO-247-2 Tube Active Standard 600 V 60A 2.6 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 25 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
RFN20TJ6SFHGC9 Rohm Semiconductor

RFN20TJ6SFHGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

978 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
UJ3D06516TS Qorvo

UJ3D06516TS

DIODE SIL CARB 650V 16A TO220-2

Qorvo

938 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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Single Diodes FAQ

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