Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UGS30JH DIODE GEN PURP 600V 30A TO263AB Taiwan Semiconductor Corporation	808	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 600 V	128pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
VS-EPX3007L-N3 DIODE GEN PURP 650V 30A TO247AD Vishay General Semiconductor - Diodes Division	499	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
IDP18E120XKSA1 DIODE GP 1.2KV 31A TO220-2-2 Infineon Technologies	423	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	31A	2.15 V @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	195 ns	100 µA @ 1200 V	-	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 150°C
S3D10065A DIODE SIL CARB 650V 10A TO220AC SMC Diode Solutions	1,964	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
S3D06065G DIODE SIL CARBIDE 650V 6A D2PAK SMC Diode Solutions	769	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 650 V	382pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
VS-8EWS12S-M3 DIODE GEN PURP 1.2KV 8A DPAK Vishay General Semiconductor - Diodes Division	2,945	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	1200 V	8A	1.1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
RFNL5TJ6SFHGC9 DIODE GEN PURP 600V 5A TO220ACFP Rohm Semiconductor	2,739	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
RFUH20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	944	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
RFN20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	883	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
DLA20IM800PC-TUB DIODE GEN PURP 800V 20A TO263AA IXYS	1,039	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	800 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	4pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
RF505TF6SC9 DIODE GEN PURP 600V 5A TO220NFM Rohm Semiconductor	430	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220NFM	150°C
C3D03065E DIODE SIL CARB 650V 11A TO252-2 Wolfspeed, Inc.	2,356	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.8 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	155pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
S4D05120A DIODE SIL CARB 1.2KV 5A TO220AC SMC Diode Solutions	853	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
STTH12T06DI DIODE GP 600V 12A TO220AC INS STMicroelectronics	548	-	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	Standard	600 V	12A	2.95 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
VS-E5TX2112S2LHM3 20A, 1200V, "X" SERIES GEN 5 FRE Vishay General Semiconductor - Diodes Division	835	-	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	20A	3.6 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
IDP08E65D2XKSA1 DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies	2	-	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	650 V	8A	2.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	40 µA @ 650 V	-	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
STTH30RQ06DY DIODE GEN PURP 600V 30A TO220AC STMicroelectronics	998	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
DMA10P1200UZ-TRL DIODE GEN PURP 1.2KV 10A TO252AA IXYS	1,673	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	10A	1.55 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	1pF @ 400V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
VS-E4PH6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	456	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	68 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-3C08ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,934	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.