PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FFSP1065B-F085 onsemi

FFSP1065B-F085

DIODE SIL CARB 650V 10A TO220-2

onsemi

789 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX3012S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TX3012S2LHM3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,582 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-20ETF08-M3 Vishay General Semiconductor - Diodes Division

VS-20ETF08-M3

DIODE GEN PURP 800V 20A TO220AC

Vishay General Semiconductor - Diodes Division

7,984 -
Datasheet - TO-220-2 Tube Active Standard 800 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 100 µA @ 800 V - - - Through Hole TO-220AC -40°C ~ 150°C
RFN20NS3STL Rohm Semiconductor

RFN20NS3STL

DIODE GEN PURP 350V 20A LPDS

Rohm Semiconductor

784 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 20A 1.35 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
C3D06065A Wolfspeed, Inc.

C3D06065A

DIODE SIL CARB 650V 19A TO220-2

Wolfspeed, Inc.

839 -
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 19A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 294pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC8H065D STMicroelectronics

STPSC8H065D

DIODE SIL CARB 650V 8A TO220AC

STMicroelectronics

794 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STTH30M06SPF STMicroelectronics

STTH30M06SPF

DIODE GEN PURP 600V 30A TO3PF

STMicroelectronics

876 -
Datasheet - TO-3P-3 Full Pack Tube Active Standard 600 V 30A 3.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 60 µA @ 600 V - - - Through Hole TO-3PF 175°C (Max)
RFS30TZ6SGC13 Rohm Semiconductor

RFS30TZ6SGC13

DIODE GEN PURP 650V 30A TO247GE

Rohm Semiconductor

584 -
Datasheet - TO-247-2 Tube Not For New Designs Standard 650 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 650 V - - - Through Hole TO-247GE 175°C
FFSD0865B-F085 onsemi

FFSD0865B-F085

DIODE SIL CARB 650V 11.6A DPAK

onsemi

3,693 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
STTH30R04DY STMicroelectronics

STTH30R04DY

DIODE GEN PURP 400V 30A TO220AC

STMicroelectronics

772 -
Datasheet - TO-220-2 Tube Active Standard 400 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
S3D10065F SMC Diode Solutions

S3D10065F

DIODE SIL CARB 650V 10A ITO220AC

SMC Diode Solutions

285 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 621pF @ 0V, 1MHz - - Through Hole ITO-220AC (TO-220-2F) -55°C ~ 175°C
FFSM0665B onsemi

FFSM0665B

DIODE SIL CARB 650V 9.1A 4PQFN

onsemi

2,980 -
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9.1A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
VS-E5TH3006S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TH3006S2LHM3

30A, 600V, "H" SERIES GEN 5 FRED

Vishay General Semiconductor - Diodes Division

789 -
Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 46 ns 20 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
S4D05120G SMC Diode Solutions

S4D05120G

DIODE SIL CARBIDE 1.2KV 5A D2PAK

SMC Diode Solutions

702 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
VS-3C10ET07T-M3 Vishay General Semiconductor - Diodes Division

VS-3C10ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

3,047 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 445pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
FFSP0865A onsemi

FFSP0865A

DIODE SIL CARB 650V 13A TO220-2

onsemi

790 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 463pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5PH3012L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PH3012L-N3

DIODE GEN PURP 1.2KV 30A TO247AD

Vishay General Semiconductor - Diodes Division

243 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 1200 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
UCHD30A09-TE24L2 KYOCERA AVX

UCHD30A09-TE24L2

DIODE SCHOTTKY 90V 30A TO263LP

KYOCERA AVX

2,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 90 V 30A 790 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - - - Surface Mount TO-263LP -40°C ~ 150°C
VS-EPX6007L-N3 Vishay General Semiconductor - Diodes Division

VS-EPX6007L-N3

DIODE GEN PURP 650V 60A TO247AD

Vishay General Semiconductor - Diodes Division

495 -
Datasheet - TO-247-2 Tube Active Standard 650 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 30 µA @ 650 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-E5PX3012L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PX3012L-N3

DIODE GEN PURP 1.2KV 30A TO247AD

Vishay General Semiconductor - Diodes Division

372 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 1200 V 30A 3.15 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
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Single Diodes FAQ

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You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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