Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
E6D16065HDIODE SIC 650V TO247 |
444 | - |
|
Datasheet | E | TO-247-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S3D50065FDIODE SCHOTTKY SILICON CARBIDE S |
294 | - |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 680 V | 112A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 680 V | 3120pF @ 0V, 100MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
PCDP1665GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 446pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-3C15ET12S2L-M315A 1200V SIC ZERO QRR SINGLE TJ |
800 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
VS-3C20ET12T-M320A 1200V SIC ZERO QRR SINGLE TJ |
1,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 110 µA @ 1200 V | 73pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
S4D40120FDIODE SCHOTTKY SILICON CARBIDE S |
500 | - |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | - | - | - | - | - | - | - | - | - | - | Through Hole | ITO-220AC | - |
|
S4D30120F1200V, 30A, ITO-220AC, SIC SCHOT |
250 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SDS120J020H3-ISATHDIODE 1200V-20A TO247-2L |
297 | - |
|
Datasheet | Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 63A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1565pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
VS-3C20EP12L-M320A 1200V SIC ZERO QRR SINGLE TJ |
500 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 110 µA @ 1200 V | 73pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-3C20CP12L-M320A 1200V SIC ZERO QRR DUAL TJMA |
500 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
1N5418USDIODE GEN PURP 400V 3A D-5B |
102 | - |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
PCDP2065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1665GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.6 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 995pF @ 1V, 100kHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SCS230ANHRTRL650V, 30A, SMD, SILICON-CARBIDE |
892 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.55 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 600 V | 1090pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
|
PCDP20120GB_T0_00601SIC DIODE 1200V/20A IN TO-220AC |
2,000 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
C6D20065D1SIC, SCHOTTKY DIODE, 64A, 650V, |
866 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 64A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
C6D20065HSIC, SCHOTTKY DIODE,66A, 650V, T |
365 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 66A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S4D30120HDIODE SIL CARB 1.2KV 94A TO247AC |
1,170 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 94A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 2581pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
VS-3C30EP12L-M330A 1200V SIC ZERO QRR SINGLE TJ |
494 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | - | 130 µA @ 1200 V | 124pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
FFSH5065B-F155650V 50A SIC SBD GEN 1.5 |
435 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 48A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.