Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-3C10CP12L-M3 10A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division	500	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS205KNHRTRL 1200V 5A SMD SILICON CARBIDE Rohm Semiconductor	200	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	260pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
BSDV10G120E2 DIOD SCHOT SIC 1200V 10A TO247-2 Bourns Inc.	2,994	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
SCS310AGC16 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
PCDG10120GB_L2_00601 SIC DIODE 1200V/10A IN TO-252AA Panjit International Inc.	6,000	-	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SDS065J016H3-ISATH DIODE 650V-16A TO247-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	48 µA @ 650 V	837pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
IDWD120E120D7XKSA1 DIODE GEN PURP 1200V 177A TO247 Infineon Technologies	129	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	177A	3 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	215 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SIT20C065 DIODE SIL CARB 650V 20A TO220AC Diotec Semiconductor	970	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
SDS120J010E3-ISARH DIODE 1200V-10A TO263-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C
VS-90EPF12L-M3 DIODE GEN PURP 1.2KV 90A TO247AD Vishay General Semiconductor - Diodes Division	466	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	90A	1.38 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
PCDF0865G1_T0_00601 650V/8A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSH3065B DIODE SIL CARB 650V 37A TO247-2 onsemi	326	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1260pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SDS065J020D3-ISARH DIODE 650V-20A TO252-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
PCDP0865GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1065GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,961	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	271pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PSC1665JJ SIC DIODES AND FETS Nexperia USA Inc.	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	475pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK R2P	-55°C ~ 175°C
PCDD1065GB_L2_00601 650V/10A IN TO-252AA PACKAGE SIL Panjit International Inc.	3,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	610pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
VS-30EPF10-M3 DIODE GP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	326	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
JAN1N5809 DIODE GEN PURP 100V 6A AXIAL Microchip Technology	117	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
FFSP15120A DIODE SIL CARB 1.2KV 15A TO220L onsemi	574	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.75 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	936pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.