Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3600UR/TRSIGNAL OR COMPUTER DIODE |
177 | - |
|
Datasheet | - | DO-213AA | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | 2.5pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
FFSB1065ADIODE SCHOTTKY 650V 14A D2PAK-3 |
800 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.75 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
VS-65EPF12L-M3DIODE GEN PURP 1.2KV 65A TO247AD |
480 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 65A | 1.42 V @ 65 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
PCDP0665GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
C3D10060G-TRDIODE SIL CARB 600V 29A TO263-2 |
523 | - |
|
Datasheet | Z-Rec® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 29A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 600 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
VS-3C10EP12L-M310A 1200V SIC ZERO QRR SINGLE TJ |
500 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
TSCDT12065G1DIODE SCHOTTKY 650V 12A TO220AC |
990 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 55.3pF @ 400V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
TSCDF12065G1DIODE SCHOTTKY 650V 12A ITO220AC |
1,000 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 55.3pF @ 400V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
E6D10065GWOLFSPEED SIC, SCHOTTKY DIODE |
1,000 | - |
|
Datasheet | E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 630pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
SCS210ANHRTRL650V, 10A, SMD, SILICON-CARBIDE |
870 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 360pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
|
IDWD100E120D7XKSA1DIODE GEN PURP 1200V 146A TO247 |
224 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 146A | 3 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 205 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
C6D10065E-TRSIC, SCHOTTKY DIODE, 10A, 650V, |
4,750 | - |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C3D10065E-TRDIODE SIL CARB 650V 32A TO252-2 |
2,050 | - |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 460.5pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
PCDD0865GB_L2_00601650V/8A IN TO-252AA PACKAGE SILI |
2,990 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 527pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
IDWD100E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 |
232 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
VS-90EPS08L-M3DIODE GEN PURP 800V 90A TO247AD |
465 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 800 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDFW40E65D1EXKSA1DIODE GP 650V 42A TO247-3-AI |
210 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 76 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-AI | -40°C ~ 175°C |
|
SCS310AMC7GDIODE SIL CARB 650V 10A TO220FM |
1,000 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS212ANHRTRL650V 12A SMD SILICON CARBIDE |
1,000 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 440pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263L | 175°C |
|
FFSP3065B-F085DIODE SIL CARB 650V 30A TO220-2 |
1,600 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1280pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.