Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-3C10ET12T-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	915	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SDS120J010H3-ISATH DIODE 1200V-10A TO247-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	36A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SCS215ANHRTRL 650V 15A SMD SILICON CARBIDE Rohm Semiconductor	500	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
JANTX1N914UR DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	233	-	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
TSCDT16065G1 DIODE SCHOTTKY 650V 16A TO220AC Taiwan Semiconductor Corporation	994	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	70pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
IDWD140E120D7XKSA1 DIODE GEN PURP 1200V 207A TO247 Infineon Technologies	167	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	207A	3 V @ 140 A	Fast Recovery =< 500ns, > 5A (Io)	225 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
TSCDF16065G1 DIODE SCHOTTKY 650V 16A ITO220AC Taiwan Semiconductor Corporation	1,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	70pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
1N3070-1 DIODE GEN PURP 175V 100MA DO7 Microchip Technology	257	-	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	-	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
SDS065J020H3-ISATH DIODE 650V-20A TO247-2L Luminus Devices Inc.	190	-	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
1N3070UR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	135	-	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
PCDF1065G1_T0_00601 650V/10A THROUGH HOLE SILICON CA Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
VS-3C15ET12T-M3 15A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	-	75 µA @ 1200 V	56pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SCS212AJTLL DIODE SIL CARB 650V 12A TO263AB Rohm Semiconductor	960	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	-	-	-	Surface Mount	TO-263AB	175°C (Max)
PCDP1065GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,975	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	446pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-1N1183A DIODE GEN PURP 50V 40A DO203AB Vishay General Semiconductor - Diodes Division	204	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	50 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 50 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
TSCDF20065G1 DIODE SCHOTTKY 650V 20A ITO220AC Taiwan Semiconductor Corporation	992	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	92.7pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
TSCDT20065G1 DIODE SCHOTTKY 650V 20A TO220AC Taiwan Semiconductor Corporation	967	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	92.7pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-3C10ET12S2L-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
S5D10170H2 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	294	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	44A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	978pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
PCDP1265GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.