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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK17A80W,S4X Toshiba Semiconductor and Storage

TK17A80W,S4X

MOSFET N-CH 800V 17A TO220SIS

Toshiba Semiconductor and Storage

91 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 290mOhm @ 8.5A, 10V 4V @ 850µA 32 nC @ 10 V ±20V 2050 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK25A60X,S5X Toshiba Semiconductor and Storage

TK25A60X,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage

34 -
Datasheet DTMOSIV-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK110E65Z,S1X Toshiba Semiconductor and Storage

TK110E65Z,S1X

650V DTMOS VI TO-220 110MOHM

Toshiba Semiconductor and Storage

50 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Through Hole TO-220
TK17E80W,S1X Toshiba Semiconductor and Storage

TK17E80W,S1X

MOSFET N-CHANNEL 800V 17A TO220

Toshiba Semiconductor and Storage

44 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 290mOhm @ 8.5A, 10V 4V @ 850µA 32 nC @ 10 V ±20V 2050 pF @ 300 V - 180W (Tc) 150°C - - Through Hole TO-220
TK090E65Z,S1X Toshiba Semiconductor and Storage

TK090E65Z,S1X

650V DTMOS VI TO-220 90MOHM

Toshiba Semiconductor and Storage

61 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-220
TK20J60W,S1VE Toshiba Semiconductor and Storage

TK20J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

33 -
Datasheet - TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C - - Through Hole TO-3P(N)
TK31E60X,S1X Toshiba Semiconductor and Storage

TK31E60X,S1X

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

87 -
Datasheet DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-220
TK31N60X,S1F Toshiba Semiconductor and Storage

TK31N60X,S1F

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

26 -
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
TK090N65Z,S1F Toshiba Semiconductor and Storage

TK090N65Z,S1F

MOSFET N-CH 650V 30A TO247

Toshiba Semiconductor and Storage

26 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
TK28N65W5,S1F Toshiba Semiconductor and Storage

TK28N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

48 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 130mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
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FETs, MOSFETs FAQ

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