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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TW060N120C,S1F Toshiba Semiconductor and Storage

TW060N120C,S1F

G3 1200V SIC-MOSFET TO-247 60MO

Toshiba Semiconductor and Storage

15 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 78mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C - - Through Hole TO-247
TW027N65C,S1F Toshiba Semiconductor and Storage

TW027N65C,S1F

G3 650V SIC-MOSFET TO-247 27MOH

Toshiba Semiconductor and Storage

35 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 37mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C - - Through Hole TO-247
TW030N120C,S1F Toshiba Semiconductor and Storage

TW030N120C,S1F

G3 1200V SIC-MOSFET TO-247 30MO

Toshiba Semiconductor and Storage

30 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 40mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C - - Through Hole TO-247
TW015N65C,S1F Toshiba Semiconductor and Storage

TW015N65C,S1F

G3 650V SIC-MOSFET TO-247 15MOH

Toshiba Semiconductor and Storage

52 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247
SSM6K404TU,LF Toshiba Semiconductor and Storage

SSM6K404TU,LF

MOSFET N-CH 20V 3A UF6

Toshiba Semiconductor and Storage

37 -
Datasheet - 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4V 55mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UF6
TK35A08N1,S4X Toshiba Semiconductor and Storage

TK35A08N1,S4X

MOSFET N-CH 80V 35A TO220SIS

Toshiba Semiconductor and Storage

50 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Tc) 10V 12.2mOhm @ 17.5A, 10V 4V @ 300µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK380A60Y,S4X Toshiba Semiconductor and Storage

TK380A60Y,S4X

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage

43 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W 150°C (TJ) - - Through Hole TO-220SIS
TK5R1A08QM,S4X Toshiba Semiconductor and Storage

TK5R1A08QM,S4X

UMOS10 TO-220SIS 80V 5.1MOHM

Toshiba Semiconductor and Storage

43 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 5.1mOhm @ 35A, 10V 3.5V @ 700µA 54 nC @ 10 V ±20V 3980 pF @ 40 V - 45W (Tc) 175°C - - Through Hole TO-220SIS
TK34E10N1,S1X Toshiba Semiconductor and Storage

TK34E10N1,S1X

MOSFET N-CH 100V 75A TO220

Toshiba Semiconductor and Storage

35 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 103W (Tc) 150°C (TJ) - - Through Hole TO-220
TK7A60W5,S5VX Toshiba Semiconductor and Storage

TK7A60W5,S5VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

46 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 650mOhm @ 3.5A, 10V 4.5V @ 350µA 16 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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