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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK31N60W5,S1VF Toshiba Semiconductor and Storage

TK31N60W5,S1VF

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

48 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 99mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
TW107N65C,S1F Toshiba Semiconductor and Storage

TW107N65C,S1F

G3 650V SIC-MOSFET TO-247 107MO

Toshiba Semiconductor and Storage

68 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 20A (Tc) 18V 145mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C - - Through Hole TO-247
TK39A60W,S4VX Toshiba Semiconductor and Storage

TK39A60W,S4VX

MOSFET N-CH 600V 38.8A TO220SIS

Toshiba Semiconductor and Storage

54 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK62N60X,S1F Toshiba Semiconductor and Storage

TK62N60X,S1F

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage

82 -
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C (TJ) - - Through Hole TO-247
TK49N65W5,S1F Toshiba Semiconductor and Storage

TK49N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

30 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 57mOhm @ 24.6A, 10V 4.5V @ 2.5mA 185 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C - - Through Hole TO-247
TK39J60W5,S1VQ Toshiba Semiconductor and Storage

TK39J60W5,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage

31 -
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK31Z60X,S1F Toshiba Semiconductor and Storage

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

26 -
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247-4L(T)
TK49N65W,S1F Toshiba Semiconductor and Storage

TK49N65W,S1F

PB-F POWER MOSFET TRANSISTOR TO2

Toshiba Semiconductor and Storage

6 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 55mOhm @ 24.6A, 10V 3.5V @ 2.5mA 160 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C - - Through Hole TO-247
TW048N65C,S1F Toshiba Semiconductor and Storage

TW048N65C,S1F

G3 650V SIC-MOSFET TO-247 48MOH

Toshiba Semiconductor and Storage

29 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 65mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C - - Through Hole TO-247
TK62Z60X,S1F Toshiba Semiconductor and Storage

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

11 -
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C - - Through Hole TO-247-4L(T)
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