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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TW140Z120C,S1F Toshiba Semiconductor and Storage

TW140Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 14

Toshiba Semiconductor and Storage

65 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 18V 191mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW083Z65C,S1F Toshiba Semiconductor and Storage

TW083Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 83

Toshiba Semiconductor and Storage

88 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 118mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW027Z65C,S1F Toshiba Semiconductor and Storage

TW027Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 27

Toshiba Semiconductor and Storage

80 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 38mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW060Z120C,S1F Toshiba Semiconductor and Storage

TW060Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 6

Toshiba Semiconductor and Storage

88 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 82mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW015Z65C,S1F Toshiba Semiconductor and Storage

TW015Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 15

Toshiba Semiconductor and Storage

98 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 22mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247-4L(X)
SSM3J118TU(TE85L) Toshiba Semiconductor and Storage

SSM3J118TU(TE85L)

MOSFET P-CH 30V 1.4A UFM

Toshiba Semiconductor and Storage

44 -
Datasheet U-MOSII 3-SMD, Flat Leads Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V - - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage

SSM3J46CTB(TPL3)

MOSFET P-CH 20V 2A CST3B

Toshiba Semiconductor and Storage

29 -
Datasheet U-MOSVI 3-SMD, No Lead Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - - 150°C (TJ) - - Surface Mount CST3B
TK2R4A08QM,S4X Toshiba Semiconductor and Storage

TK2R4A08QM,S4X

UMOS10 TO-220SIS 80V 2.4MOHM

Toshiba Semiconductor and Storage

78 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 179 nC @ 10 V ±20V 13000 pF @ 40 V - 47W (Tc) 175°C - - Through Hole TO-220SIS
SSM3J327R,LF Toshiba Semiconductor and Storage

SSM3J327R,LF

MOSFET P-CH 20V 3.9A SOT23F

Toshiba Semiconductor and Storage

6,138 -
Datasheet U-MOSVI SOT-23-3 Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 290 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount SOT-23F
TPH1R712MD,L1Q Toshiba Semiconductor and Storage

TPH1R712MD,L1Q

MOSFET P-CH 20V 60A 8SOP

Toshiba Semiconductor and Storage

3,557 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 4.5V 1.7mOhm @ 30A, 4.5V 1.2V @ 1mA 182 nC @ 5 V ±12V 10900 pF @ 10 V - 78W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
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FETs, MOSFETs FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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