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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK25N60X5,S1F Toshiba Semiconductor and Storage

TK25N60X5,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage

76 -
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-247
TK20E60W,S1VX Toshiba Semiconductor and Storage

TK20E60W,S1VX

MOSFET N-CH 600V 20A TO220

Toshiba Semiconductor and Storage

58 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-220
TK110N65Z,S1F Toshiba Semiconductor and Storage

TK110N65Z,S1F

POWER MOSFET TRANSISTOR TO-247(O

Toshiba Semiconductor and Storage

35 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Through Hole TO-247
TK28N65W,S1F Toshiba Semiconductor and Storage

TK28N65W,S1F

MOSFET N-CH 650V 27.6A TO247

Toshiba Semiconductor and Storage

70 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
TK20N60W,S1VF Toshiba Semiconductor and Storage

TK20N60W,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

36 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-247
TK31E60W,S1VX Toshiba Semiconductor and Storage

TK31E60W,S1VX

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

42 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-220
TK35N65W5,S1F Toshiba Semiconductor and Storage

TK35N65W5,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TW107Z65C,S1F Toshiba Semiconductor and Storage

TW107Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 10

Toshiba Semiconductor and Storage

90 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 20A (Tc) 18V 152mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C - - Through Hole TO-247-4L(X)
TK31J60W5,S1VQ Toshiba Semiconductor and Storage

TK31J60W5,S1VQ

MOSFET N-CH 600V 30.8A TO3P

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK62N60W5,S1VF Toshiba Semiconductor and Storage

TK62N60W5,S1VF

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 45mOhm @ 30.9A, 10V 4.5V @ 3.1mA 205 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C - - Through Hole TO-247
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FETs, MOSFETs FAQ

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