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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK100A08N1,S4X Toshiba Semiconductor and Storage

TK100A08N1,S4X

MOSFET N-CH 80V 100A TO220SIS

Toshiba Semiconductor and Storage

9,581 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8A60W5,S5VX Toshiba Semiconductor and Storage

TK8A60W5,S5VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage

5,085 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 540mOhm @ 4A, 10V 4.5V @ 400µA 22 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK17N65W,S1F Toshiba Semiconductor and Storage

TK17N65W,S1F

MOSFET N-CH 650V 17.3A TO247

Toshiba Semiconductor and Storage

7,679 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-247
TK40E10N1,S1X Toshiba Semiconductor and Storage

TK40E10N1,S1X

MOSFET N CH 100V 90A TO220

Toshiba Semiconductor and Storage

24 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 126W (Tc) 150°C (TJ) - - Through Hole TO-220
TK25E60X,S1X Toshiba Semiconductor and Storage

TK25E60X,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

9,253 -
Datasheet DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-220
TK65A10N1,S4X Toshiba Semiconductor and Storage

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

Toshiba Semiconductor and Storage

4,735 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK14E65W5,S1X Toshiba Semiconductor and Storage

TK14E65W5,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

8,556 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK17V65W,LQ Toshiba Semiconductor and Storage

TK17V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

14 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 210mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK31N60W,S1VF Toshiba Semiconductor and Storage

TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

7,400 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
TK16J60W5,S1VQ Toshiba Semiconductor and Storage

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

7 -
Datasheet - TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-3P(N)
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FETs, MOSFETs FAQ

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