PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
S3M0040120J SMC Diode Solutions

S3M0040120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 76A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
TSG65N110CE RVG Taiwan Semiconductor Corporation

TSG65N110CE RVG

650V, 18A, PDFN88, E-MODE GAN TR

Taiwan Semiconductor Corporation

3,000 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMDQ75R027M1HXUMA1 Infineon Technologies

AIMDQ75R027M1HXUMA1

AIMDQ75R027M1HXUMA1

Infineon Technologies

671 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
G3F40MT12K GeneSiC Semiconductor

G3F40MT12K

1200V 40M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

552 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
AOK033V120X2 Alpha & Omega Semiconductor Inc.

AOK033V120X2

1200V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

208 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247
NSF060120L4A0Q Nexperia USA Inc.

NSF060120L4A0Q

NSF060120L4A0/SOT8071/TO247-4L

Nexperia USA Inc.

450 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
IPDQ60R017S7AXTMA1 Infineon Technologies

IPDQ60R017S7AXTMA1

MOSFET

Infineon Technologies

750 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMZC120R026M2HXKSA1 Infineon Technologies

IMZC120R026M2HXKSA1

IMZC120R026M2HXKSA1

Infineon Technologies

215 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 69A (Tc) 15V, 18V 25mOhm @ 27A, 18V 5.1V @ 8.6mA 60 nC @ 18 V +23V, -7V 1990 pF @ 800 V - 289W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IMZA75R027M1HXKSA1 Infineon Technologies

IMZA75R027M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

239 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AOK065V120X2 Alpha & Omega Semiconductor Inc.

AOK065V120X2

SILICON CARBIDE MOSFET, ENHANCEM

Alpha & Omega Semiconductor Inc.

118 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40.3A (Tc) 15V 85mOhm @ 20A, 15V 3.5V @ 250µA 62.3 nC @ 15 V +18V, -8V 1716 pF @ 800 V - 187.5W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
SCT060HU75G3AG STMicroelectronics

SCT060HU75G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

582 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 30A (Tc) 15V, 18V 78mOhm @ 15A, 18V 4.2V @ 1mA 29 nC @ 18 V 4.2V @ 1mA 680 pF @ 400 V - 185W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount HU3PAK
IPZA60R016CM8XKSA1 Infineon Technologies

IPZA60R016CM8XKSA1

IPZA60R016CM8XKSA1

Infineon Technologies

391 -
Datasheet CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 123A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 521W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
NVBG023N065M3S onsemi

NVBG023N065M3S

SIC MOS D2PAK-7L 23MOHM 650V M3S

onsemi

1,600 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 70A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1951 pF @ 400 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
G3F33MT06K GeneSiC Semiconductor

G3F33MT06K

650V 27M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

600 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 74A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
NVHL060N065SC1 onsemi

NVHL060N065SC1

SIC MOS TO247-3L 650V

onsemi

450 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
GS66502B-MR Infineon Technologies Canada Inc.

GS66502B-MR

GS66502B-MR

Infineon Technologies Canada Inc.

208 -
Datasheet - 3-SMD, No Lead Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7.5A (Tc) 6V 260mOhm @ 2.25A, 6V 2.6V @ 1.75mA 1.6 nC @ 6 V +7V, -10V 60 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
TW048Z65C,S1F Toshiba Semiconductor and Storage

TW048Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 48

Toshiba Semiconductor and Storage

243 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 69mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C - - Through Hole TO-247-4L(X)
AIMBG120R060M1XTMA1 Infineon Technologies

AIMBG120R060M1XTMA1

SIC_DISCRETE

Infineon Technologies

959 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 38A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +23V, -5V 880 pF @ 800 V - 202W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
NVHL023N065M3S onsemi

NVHL023N065M3S

SIC MOS TO247-3L 23MOHM 650V M3S

onsemi

440 -
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 70A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1952 pF @ 400 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
SCTH35N65G2V-7AG STMicroelectronics

SCTH35N65G2V-7AG

SICFET N-CH 650V 45A H2PAK-7

STMicroelectronics

1,000 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
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FETs, MOSFETs FAQ

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