PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK20N60W,S1VF Toshiba Semiconductor and Storage

TK20N60W,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

36 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-247
AIMCQ120R160M1TXTMA1 Infineon Technologies

AIMCQ120R160M1TXTMA1

SIC_DISCRETE

Infineon Technologies

100 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 18.6A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +25V, -10V 350 pF @ 800 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
SCT055TO65G3 STMicroelectronics

SCT055TO65G3

SILICON CARBIDE POWER MOSFET 650

STMicroelectronics

88 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMCQ120R120M1TXTMA1 Infineon Technologies

AIMCQ120R120M1TXTMA1

SIC_DISCRETE

Infineon Technologies

100 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 24A (Tc) 18V, 20V 150mOhm @ 7A, 20V 5.1V @ 2.2mA 18 nC @ 20 V +25V, -10V 458 pF @ 800 V - 161W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IMZC120R078M2HXKSA1 Infineon Technologies

IMZC120R078M2HXKSA1

IMZC120R078M2HXKSA1

Infineon Technologies

90 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 28A (Tc) 15V, 18V 78mOhm @ 9A, 18V 5.1V @ 2.8mA 21 nC @ 18 V +23V, -7V 700 pF @ 800 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
TK31E60W,S1VX Toshiba Semiconductor and Storage

TK31E60W,S1VX

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

42 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-220
PSMN1R1-100CSEJ Nexperia USA Inc.

PSMN1R1-100CSEJ

PSMN1R1-100CSE/SOT8005A/CCPAK1

Nexperia USA Inc.

46 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 430A (Tc) 10V 1.09mOhm @ 25A, 10V 3.6V @ 1mA 509 nC @ 10 V ±20V 36460 pF @ 50 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
IPQC60T040S7AXTMA1 Infineon Technologies

IPQC60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

75 -
Datasheet CoolMOS™ 22-PowerBSOP Module Box Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
TK35N65W5,S1F Toshiba Semiconductor and Storage

TK35N65W5,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TW107Z65C,S1F Toshiba Semiconductor and Storage

TW107Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 10

Toshiba Semiconductor and Storage

90 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 20A (Tc) 18V 152mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C - - Through Hole TO-247-4L(X)
TK31J60W5,S1VQ Toshiba Semiconductor and Storage

TK31J60W5,S1VQ

MOSFET N-CH 600V 30.8A TO3P

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
STW65N045M9-4 STMicroelectronics

STW65N045M9-4

N-CHANNEL 650 V, 39 MOHM TYP., 5

STMicroelectronics

90 -
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 45mOhm @ 28A, 10V 4.2V @ 250µA 80 nC @ 10 V ±30V 4610 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
SCT040TO65G3 STMicroelectronics

SCT040TO65G3

SILICON CARBIDE POWER MOSFET 650

STMicroelectronics

100 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK62N60W5,S1VF Toshiba Semiconductor and Storage

TK62N60W5,S1VF

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 45mOhm @ 30.9A, 10V 4.5V @ 3.1mA 205 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C - - Through Hole TO-247
TW140Z120C,S1F Toshiba Semiconductor and Storage

TW140Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 14

Toshiba Semiconductor and Storage

65 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 18V 191mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C - - Through Hole TO-247-4L(X)
AIMZH120R080M1TXKSA1 Infineon Technologies

AIMZH120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

17 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IPDQ60T022S7XTMA1 Infineon Technologies

IPDQ60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

100 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP60R016CM8XKSA1 Infineon Technologies

IPP60R016CM8XKSA1

IPP60R016CM8XKSA1

Infineon Technologies

23 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
APT10M19BVRG Microchip Technology

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

53 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - - - Through Hole TO-247 [B]
IPQC60T022S7AXTMA1 Infineon Technologies

IPQC60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs FAQ

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