PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSC080SMA120JS15 Microchip Technology

MSC080SMA120JS15

MOSFET SIC 1200V 80 MOHM 15A SOT

Microchip Technology

15 -
Datasheet - SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
TW015Z65C,S1F Toshiba Semiconductor and Storage

TW015Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 15

Toshiba Semiconductor and Storage

98 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 22mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247-4L(X)
MSC017SMA120B Microchip Technology

MSC017SMA120B

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology

38 -
Datasheet - TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +22V, -10V 5280 pF @ 1000 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IDYH50G200C5XKSA1 Infineon Technologies

IDYH50G200C5XKSA1

SIC DISCRETE

Infineon Technologies

75 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
FF100R12W1T7EB11BPSA1 Infineon Technologies

FF100R12W1T7EB11BPSA1

EASY STANDARD

Infineon Technologies

24 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
IXTX6N200P3HV Littelfuse Inc.

IXTX6N200P3HV

MOSFET N-CH 2000V 6A TO247PLUSHV

Littelfuse Inc.

15 -
Datasheet Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 2000 V 6A (Tc) 10V 4Ohm @ 3A, 10V 5V @ 250µA 143 nC @ 10 V ±20V 3700 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247PLUS-HV
APT50M50JVR Microchip Technology

APT50M50JVR

MOSFET N-CH 500V 77A ISOTOP

Microchip Technology

10 -
Datasheet POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 77A (Tc) - 50mOhm @ 500mA, 10V 4V @ 5mA 1000 nC @ 10 V - 19600 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT20M11JVR Microchip Technology

APT20M11JVR

MOSFET N-CH 200V 175A ISOTOP

Microchip Technology

6 -
Datasheet POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 175A (Tc) 10V 11mOhm @ 500mA, 10V 4V @ 5mA 180 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT10025JVR Microchip Technology

APT10025JVR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology

10 -
Datasheet POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 34A (Tc) - 250mOhm @ 500mA, 10V 4V @ 5mA 990 nC @ 10 V - 18000 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT8011JLL Microchip Technology

APT8011JLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology

8 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 51A (Tc) - 110mOhm @ 25.5A, 10V 5V @ 5mA 650 nC @ 10 V - 9480 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT60M60JLL Microchip Technology

APT60M60JLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology

10 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 60mOhm @ 35A, 10V 5V @ 5mA 289 nC @ 10 V ±30V 12630 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT8011JFLL Microchip Technology

APT8011JFLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology

10 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 51A (Tc) - 125mOhm @ 25.5A, 10V 5V @ 5mA 650 nC @ 10 V - 9480 pF @ 25 V - - - - - Chassis Mount ISOTOP®
FF6MR12W2M1HB70BPSA1 Infineon Technologies

FF6MR12W2M1HB70BPSA1

LOW POWER EASY

Infineon Technologies

10 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
FF4MR12W2M1HB70BPSA1 Infineon Technologies

FF4MR12W2M1HB70BPSA1

LOW POWER EASY

Infineon Technologies

13 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
EPC7003ASH EPC Space, LLC

EPC7003ASH

GAN FET HEMT 100V 10A.045OHM 4UB

EPC Space, LLC

25 -
Datasheet eGaN®, FSMD-A 4-SMD, No Lead Bulk Active N-Channel, Depletion Mode GaNFET (Gallium Nitride) 100 V 10A (Tc) 5V 45mOhm @ 10A, 5V 2.5V @ 1.4mA 2.2 nC @ 5 V +6V, -4V 233 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
EPC7004BSH EPC Space, LLC

EPC7004BSH

GAN FET HEMT

EPC Space, LLC

25 -
Datasheet eGaN®, FSMD-B 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 15mOhm @ 30A, 5V 2.5V @ 7mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-FSMD-B
FF1700XTR17IE5DBPSA1 Infineon Technologies

FF1700XTR17IE5DBPSA1

PP IHM I

Infineon Technologies

2 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
NVXR22S90M2SPM onsemi

NVXR22S90M2SPM

SIC 900V 6D MOSFET V-SSDC SPM

onsemi

4 -
Datasheet - - Bulk Active - - - - - - - - - - - - - - - - -
2N7002 Shenzhen Slkormicro Semicon Co., Ltd.

2N7002

60V 115MA 7.5@10V,500MA 225MW N

Shenzhen Slkormicro Semicon Co., Ltd.

212 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 115mA 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 225mW 150°C (TJ) - - Surface Mount SOT-23
BSS138 EVVO

BSS138

MOSFET N-CH 50V 220MA SOT23-3

EVVO

517 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) 150°C (TJ) - - Surface Mount SOT-23
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COMPONENT SOURCING SUPPORT

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FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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