FETs, MOSFETs
Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S2M0025120JMOSFET SILICON CARBIDE SIC 1200V |
46 | - |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 177 nC @ 20 V | +25V, -10V | 4150 pF @ 1000 V | - | 311W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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SCT025H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
85 | - |
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Datasheet | * | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT018H65G3AGH2PAK-7 |
100 | - |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 27mOhm @ 30A, 18V | 4.2V @ 5mA | 79.4 nC @ 18 V | +22V, -10V | 2124 pF @ 400 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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S2M0080120NMOSFET SILICON CARBIDE SIC 1200V |
36 | - |
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Datasheet | - | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +20V, -5V | 1324 pF @ 1000 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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SCT018W65G3-4AGTO247-4 |
100 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Tc) | 15V, 18V | 27mOhm @ 30A, 18V | 4.2V @ 5mA | 77 nC @ 18 V | +22V, -10V | 2077 pF @ 400 V | - | 398W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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SCT025W120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 | - |
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Datasheet | * | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT025W120G3-4AGTO247-4 |
75 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 37mOhm @ 25A, 18V | 4.2V @ 5mA | 73 nC @ 18 V | +18V, -5V | 1990 pF @ 800 V | - | 388W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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MSC015SMA070B4NMOSFET SIC 700 V 15 MOHM TO-247- |
60 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700 V | 112A (Tc) | 18V, 20V | 19mOhm @ 40A, 20V | 5V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4324 pF @ 700 V | - | 524W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT012W90G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 | - |
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Datasheet | * | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S2M0040120N-1MOSFET SILICON CARBIDE SIC 1200V |
36 | - |
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Datasheet | - | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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SCT011HU75G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
50 | - |
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Datasheet | * | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSC017SMA120B4NMOSFET SIC 1200 V 17 MOHM TO-247 |
30 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 119A (Tc) | 18V, 20V | 22mOhm @ 40A, 20V | 5V @ 4.5mA | 194 nC @ 20 V | +23V, -10V | 4274 pF @ 1200 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MSC025SMA120B4NMOSFET SIC 1200 V 25 MOHM TO-247 |
30 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 113A (Tc) | 18V, 20V | 31mOhm @ 40A, 20V | 5V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3633 pF @ 1000 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S3M0040120NMOSFET SILICON CARBIDE SIC 1200V |
36 | - |
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Datasheet | - | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 483W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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IXTH1N300P3HVMOSFET N-CH 3000V 1A TO247HV |
8 | - |
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Datasheet | Polar P3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 1A (Tc) | 10V | 50Ohm @ 500mA, 10V | 4V @ 250µA | 30.6 nC @ 10 V | ±20V | 895 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247HV |
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AIMZHN120R020M1TXKSA1SIC_DISCRETE |
30 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
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DMWSH120H28SM4QSIC MOSFET BVDSS: >1000V TO247-4 |
38 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 156.3 nC @ 15 V | +19V, -8V | - | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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S2M0025120NMOSFET SILICON CARBIDE SIC 1200V |
34 | - |
|
Datasheet | - | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 165 nC @ 20 V | +20V, -5V | 4054 pF @ 1000 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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TM3B0020120A1200V 20MOHM SIC MOSFET TO247-4 |
40 | - |
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Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S3M0016120NMOSFET SILICON CARBIDE SIC 1200V |
36 | - |
|
Datasheet | - | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 23mOhm @ 75A, 18V | 4V @ 30mA | 287 nC @ 18 V | +22V, -8V | 5251 pF @ 1000 V | - | 732W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
FETs, MOSFETs FAQ
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You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
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