FETs, MOSFETs
Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPDQ60T022S7AXTMA1AUTOMOTIVE_COOLMOS |
100 | - |
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Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT040W65G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
75 | - |
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Datasheet | * | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TW083Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 83 |
88 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 118mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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APT5015BVFRGMOSFET N-CH 500V 32A TO247 |
40 | - |
|
Datasheet | POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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DMWSH120H90SM4QSIC MOSFET BVDSS: >1000V TO247-4 |
17 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 47.6 nC @ 15 V | +19V, -8V | 1112 pF @ 1000 V | - | 235W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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AIMCQ120R040M1TXTMA1SIC_DISCRETE |
90 | - |
|
Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 61A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +25V, -10V | 1264 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPQC60T017S7XTMA1HIGH POWER_NEW |
100 | - |
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Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IPDQ60T017S7XTMA1HIGH POWER_NEW |
68 | - |
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Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IPDQ60T017S7AXTMA1AUTOMOTIVE_COOLMOS |
100 | - |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPQC60T017S7AXTMA1AUTOMOTIVE_COOLMOS |
100 | - |
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Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TM3E0039120ASIC MOSFET |
90 | - |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tray | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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SCT027H65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 | - |
|
Datasheet | * | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AIMCQ120R030M1TXTMA1SIC_DISCRETE |
63 | - |
|
Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 78A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +25V, -10V | 1738 pF @ 800 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
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TM3B0039120ASIC MOSFET |
90 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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MSC040SMA120B4NMOSFET SIC 1200 V 40 MOHM TO-247 |
60 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 71A (Tc) | 18V, 20V | 50mOhm @ 40A, 20V | 5V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1962 pF @ 1000 V | - | 372W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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TW027Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 27 |
80 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 38mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TW060Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 6 |
88 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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SCT040W120G3AGHIP-247 IN LINE HEAT SINK 2MM |
100 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 56 nC @ 18 V | +22V, -10V | 1329 pF @ 800 V | - | 312W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
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DMWS120H100SM4SIC MOSFET BVDSS: >1000V TO247-4 |
27 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37.2A (Tc) | 15V | 100mOhm @ 20A, 15V | 3.5V @ 5mA | 52 nC @ 15 V | +19V, -8V | 1516 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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STW65N023M9-4N-CHANNEL 650 V, 19.9 MOHM TYP., |
59 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 23mOhm @ 48A, 10V | 4.2V @ 250µA | 230 nC @ 10 V | ±30V | 8844 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
FETs, MOSFETs FAQ
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You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
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