Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RB208RSM15STL1 150V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	4,000	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	150 V	15A	880 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8.3 µA @ 150 V	-	-	-	Surface Mount	TO-277A	175°C
NRVTS30120MFST3G DIODE SCHOTTKY 120V 30A 5DFN onsemi	4,304	-	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	Schottky	120 V	30A	950 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 120 V	1470pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
DSC08C065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,495	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	278pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
FFSP0665B DIODE SIL CARB 650V 8A TO220-2 onsemi	483	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DST2060DJF DIODE SCHOTTKY 60V 20A 8DFN Littelfuse Inc.	14,843	-	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	Schottky	60 V	20A	750 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	-	-	Surface Mount	8-PDFN (5x6)	-55°C ~ 150°C
PSDP3060L1_T0_00001 TO-220AC, FAST Panjit International Inc.	3,935	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
VS-6EWH06FNTRHM3 DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division	2,000	-	RFQ	Datasheet	FRED Pt®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	6A	2.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-252AA (DPAK)	-65°C ~ 175°C
YQ12RSM10SDTFTL1 TRENCH MOS STRUCTURE, 100V, 12A Rohm Semiconductor	4,000	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	12A	670 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
TRS4E65H,S1Q G3 SIC-SBD 650V 4A TO-220-2L Toshiba Semiconductor and Storage	341	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.35 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	263pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
SE30DT12HM3/I DIODE GEN PURP 1.2KV 30A SMPD Vishay General Semiconductor - Diodes Division	1,243	-	RFQ	Datasheet	eSMP®	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	Standard	1200 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	3.4 µs	10 µA @ 1200 V	132pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	SMPD	-55°C ~ 175°C
SDS065J004D3-ISARH DIODE 650V-4A TO220-2L Luminus Devices Inc.	150	-	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	14A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	12 µA @ 650 V	213pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
UF1008F_T0_00001 ITO-220AC, ULTRA Panjit International Inc.	1,738	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	800 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 800 V	50pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
SIT08C065 DIODE SIL CARB 650V 8A TO220AC Diotec Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
YQ20NL10SDTL TRENCH MOS STRUCTURE, 100V, 20A Rohm Semiconductor	988	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 100 V	-	-	-	Surface Mount	TO-263L	150°C
P2500X DIODE AVALANCHE 1800V 25A P600 Diotec Semiconductor	940	-	RFQ	Datasheet	-	P600, Axial	Cut Tape (CT)	Active	Avalanche	1800 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1800 V	-	-	-	Through Hole	P-600	-50°C ~ 175°C
VS-30ETH06STRR-M3 DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division	4,542	-	RFQ	Datasheet	FRED Pt®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-65°C ~ 175°C
YQ15RSM10SDTFTL1 TRENCH MOS STRUCTURE, 100V, 15A Rohm Semiconductor	3,328	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	15A	680 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
FFSH1065B-F155 650V 10A SIC SBD GEN 1.5 onsemi	153	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-20ATS12HM3 DIODE GEN PURP 1.2KV 20A TO220-3 Vishay General Semiconductor - Diodes Division	975	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	1200 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-220-3	-40°C ~ 150°C
SDS120J002C3-ISATH DIODE 1200V-2A TO220-2L Luminus Devices Inc.	169	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	11A	1.5 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 1200 V	165pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.