Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
CRU24730-600 SL RECTIFIER-ULTRA FAST <100 Central Semiconductor Corp	1,440	-	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MBR30170MFST3G DIODE SCHOTTKY 170V 30A 5DFN onsemi	5,000	-	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	Schottky	170 V	30A	890 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 170 V	821pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
TRS6V65H,LQ G3 SIC-SBD 650V 6A DFN8X8 Toshiba Semiconductor and Storage	4,803	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.35 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	392pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
FESF16JTHE3_A/P DIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division	1,995	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	16A	1.5 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-65°C ~ 150°C
SF3006PT DIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation	806	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	400 V	30A	1.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
YQ30NL10SETL TRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor	990	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	-	-	Surface Mount	TO-263L	150°C
VS-EPH3007L-N3 DIODE GEN PURP 650V 30A TO247AD Vishay General Semiconductor - Diodes Division	390	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	37 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-EPU3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	499	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
TRS6E65H,S1Q G3 SIC-SBD 650V 6A TO-220-2L Toshiba Semiconductor and Storage	194	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.35 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	392pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
BSDH08G65E2 DIODE SCHOT SIC 650V 8A TO220-2 Bourns Inc.	3,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-25ETS08S-M3 DIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division	7,049	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	800 V	25A	1.14 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
SDS065J006D3-ISARH DIODE 650V-6A TO252-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO263	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
VS-20ETF06STRL-M3 DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division	6,202	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
IDW50E60FKSA1 DIODE GEN PURP 600V 80A TO247-3 Infineon Technologies	240	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	80A	2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
FFSB0665B DIODE SIL CARB 650V 8A D2PAK-2 onsemi	712	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	-	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
SDS065J010N3-ISATH DIODE 650V-10A TO220N-2L Luminus Devices Inc.	290	-	RFQ	Datasheet	Sanan TO220N	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	26A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	556pF @ 0V, 1MHz	-	-	Through Hole	TO-220N-2L	-55°C ~ 175°C
BSDD06G65E2 DIODE SIC 650V 6A TO252 Bourns Inc.	4,963	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 650 V	201pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SDS065J006C3-ISATH DIODE 650V-6A TO220-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-8EWS12STRL-M3 DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division	2,900	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
SDS065J006E3-ISARH DIODE 650V-6A TO263-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.