PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-8EWS16S-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS16S-M3

DIODE GEN PURP 1.6KV 8A TO252

Vishay General Semiconductor - Diodes Division

2,906 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 1600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
PCDD0465G1_L2_00001 Panjit International Inc.

PCDD0465G1_L2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,712 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 146pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
DSC10A065D1-13 Diodes Incorporated

DSC10A065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

1,956 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 650 V 434pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
RHRP3060G Diotec Semiconductor

RHRP3060G

DIODE GEN PURP 600V 30A TO220AC

Diotec Semiconductor

590 -
Datasheet - TO-220-2 Bulk Active Standard 600 V 30A 1.7 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 5 µA @ 600 V - - - Through Hole TO-220AC -50°C ~ 175°C
TSCDT06065G1 Taiwan Semiconductor Corporation

TSCDT06065G1

DIODE SCHOTTKY 650V 6A TO220AC

Taiwan Semiconductor Corporation

966 -
Datasheet - TO-220-2 Tube Active Schottky 650 V 6A 1.45 V @ 6 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 30.5pF @ 400V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-20ETF06THM3 Vishay General Semiconductor - Diodes Division

VS-20ETF06THM3

DIODE GEN PURP 600V 20A TO220AC

Vishay General Semiconductor - Diodes Division

730 -
Datasheet - TO-220-2 Tube Active Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 150°C
TSCDF06065G1 Taiwan Semiconductor Corporation

TSCDF06065G1

DIODE SCHOTTKY 650V 6A ITO220AC

Taiwan Semiconductor Corporation

946 -
Datasheet - TO-220-2 Full Pack Tube Active Schottky 650 V 6A 1.45 V @ 6 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 30.5pF @ 400V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
RBQ16NL45BFHHTL Rohm Semiconductor

RBQ16NL45BFHHTL

45V, 16A, TO-263L, LOW IR SBD FO

Rohm Semiconductor

1,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 16A 610 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 45 V - Automotive AEC-Q101 Surface Mount TO-263L 175°C
IDW30E60FKSA1 Infineon Technologies

IDW30E60FKSA1

DIODE GEN PURP 600V 60A TO247-3

Infineon Technologies

179 -
Datasheet - TO-247-3 Tube Active Standard 600 V 60A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 143 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
VS-20ETS16-M3 Vishay General Semiconductor - Diodes Division

VS-20ETS16-M3

DIODE GEN PURP 1.6KV 20A TO220-3

Vishay General Semiconductor - Diodes Division

7,750 -
Datasheet - TO-220-3 Tube Active Standard 1600 V 20A 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-220-3 -40°C ~ 150°C
RFUH25NS3SFHTL Rohm Semiconductor

RFUH25NS3SFHTL

FAST RECOVERY DIODE (AEC-Q101 QU

Rohm Semiconductor

1,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 20A 1.45 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - Automotive AEC-Q101 Surface Mount LPDS 150°C
VS-3C08EV07T-M3/I Vishay General Semiconductor - Diodes Division

VS-3C08EV07T-M3/I

SIC-G3-SLIMDPAK 2L

Vishay General Semiconductor - Diodes Division

4,288 -
Datasheet eSMP® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 340pF @ 1V, 1MHz - - Surface Mount SlimDPAK -55°C ~ 175°C
IDH04SG60CXKSA2 Infineon Technologies

IDH04SG60CXKSA2

DIODE SIL CARB 600V 4A TO220-2-1

Infineon Technologies

334 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 4A 2.3 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 600 V 80pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
RFNL15TJ6SFHGC9 Rohm Semiconductor

RFNL15TJ6SFHGC9

SUPER FAST RECOVERY DIODE : RFNL

Rohm Semiconductor

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 15A 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
YQ30NL10SEFHTL Rohm Semiconductor

YQ30NL10SEFHTL

TRENCH MOS STRUCTURE, 100V, 30A,

Rohm Semiconductor

954 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 30A 860 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-263L 150°C
MUR30120BH-BP Micro Commercial Co

MUR30120BH-BP

DIODE FAST REC 30A 1.2KV

Micro Commercial Co

1,779 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 2.4 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
FFSB0865B onsemi

FFSB0865B

DIODE SIL CARB 650V 10.1A D2PAK

onsemi

765 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10.1A 1.7 V @ 8 A No Recovery Time > 500mA (Io) - 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
DST3060DJF Littelfuse Inc.

DST3060DJF

DIODE SCHOTTKY 60V 30A 8DFN

Littelfuse Inc.

17,683 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active Schottky 60 V 30A 770 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 6 mA @ 60 V - - - Surface Mount 8-PDFN (5x6) -55°C ~ 150°C
PLDS3080H Taiwan Semiconductor Corporation

PLDS3080H

30A, 800V, Standard Rectifier

Taiwan Semiconductor Corporation

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 30A 1.18 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 138pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 150°C
SF3008PT Taiwan Semiconductor Corporation

SF3008PT

DIODE GEN PURP 600V 30A TO247AD

Taiwan Semiconductor Corporation

772 -
Datasheet - TO-247-3 Tube Active Standard 600 V 30A 1.7 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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Single Diodes FAQ

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