PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-8ETL06STRRHM3 Vishay General Semiconductor - Diodes Division

VS-8ETL06STRRHM3

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

782 -
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 8A 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
RB218RSM10STFTL1 Rohm Semiconductor

RB218RSM10STFTL1

100V 20A, TO-277A, ULTRA LOW SBD

Rohm Semiconductor

4,000 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 20A 880 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277A 175°C
IDW15E65D2FKSA1 Infineon Technologies

IDW15E65D2FKSA1

DIODE GP 650V 30A TO247-3-1

Infineon Technologies

219 -
Datasheet - TO-247-3 Tube Active Standard 650 V 30A 2.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 47 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
SF2004PTH Taiwan Semiconductor Corporation

SF2004PTH

DIODE GEN PURP 200V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2004PT Taiwan Semiconductor Corporation

SF2004PT

DIODE GEN PURP 200V 20A TO247AD

Taiwan Semiconductor Corporation

897 -
Datasheet - TO-247-3 Tube Active Standard 200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2005PT Taiwan Semiconductor Corporation

SF2005PT

DIODE GEN PURP 300V 20A TO247AD

Taiwan Semiconductor Corporation

892 -
Datasheet - TO-247-3 Tube Active Standard 300 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2005PTH Taiwan Semiconductor Corporation

SF2005PTH

DIODE GEN PURP 300V 20A TO247AD

Taiwan Semiconductor Corporation

890 -
Datasheet - TO-247-3 Tube Active Standard 300 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2008PTH Taiwan Semiconductor Corporation

SF2008PTH

DIODE GEN PURP 600V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 600 V 20A 1.9 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2008PT Taiwan Semiconductor Corporation

SF2008PT

DIODE GEN PURP 600V 20A TO247AD

Taiwan Semiconductor Corporation

899 -
Datasheet - TO-247-3 Tube Active Standard 600 V 20A 1.9 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SDS065J008N3-ISATH Luminus Devices Inc.

SDS065J008N3-ISATH

DIODE 650V-8A TO220N-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO220N TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 24 µA @ 650 V 395pF @ 0V, 1MHz - - Through Hole TO-220N-2L -55°C ~ 175°C
BSDH10G65E2 Bourns Inc.

BSDH10G65E2

DIODE SIC 650V 10A TO220-2

Bourns Inc.

2,873 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 323pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
DSC08A065D1-13 Diodes Incorporated

DSC08A065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 230 µA @ 650 V 348pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
DSC10C065D1-13 Diodes Incorporated

DSC10C065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

2,495 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 230 µA @ 650 V 348pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
RB078BM10SFHHTL Rohm Semiconductor

RB078BM10SFHHTL

100V 5A, TO-252, ULTRA LOW IR SB

Rohm Semiconductor

2,480 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 100 V 5A 740 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 6.4 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-252 175°C
C3D04065E-TR Wolfspeed, Inc.

C3D04065E-TR

DIODE SIL CARB 650V 13.5A TO252

Wolfspeed, Inc.

1,970 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 13.5A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 251pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
PSDH3060S1_T0_00001 Panjit International Inc.

PSDH3060S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,434 -
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 250 µA @ 600 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
C6D04065E-TR Wolfspeed, Inc.

C6D04065E-TR

SIC, SCHOTTKY DIODE, 4A, 650V, T

Wolfspeed, Inc.

892 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 16A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 256pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
STW80300C SMC Diode Solutions

STW80300C

300V, 80A, TO-247AD, ULTRA LOW V

SMC Diode Solutions

1,740 -
Datasheet - - Tube Active - - - - - - - - - - - - -
CRU24715-600 SL Central Semiconductor Corp

CRU24715-600 SL

RECTIFIER-ULTRA FAST <100

Central Semiconductor Corp

360 -
Datasheet - - Tube Active - - - - - - - - - - - - -
VS-3C06EV07T-M3/I Vishay General Semiconductor - Diodes Division

VS-3C06EV07T-M3/I

SIC-G3-SLIMDPAK 2L

Vishay General Semiconductor - Diodes Division

4,377 -
Datasheet eSMP® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 47 µA @ 650 V 255pF @ 1V, 1MHz - - Surface Mount SlimDPAK -55°C ~ 175°C
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Single Diodes FAQ

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You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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