Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SF3008PTH DIODE GEN PURP 600V 30A TO247AD Taiwan Semiconductor Corporation	688	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SDS065J006S3-ISBRH DIODE 650V-6A DFN8*8-4L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
SDS065J008D3-ISARH DIODE 650V-8A TO252-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.3 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	-	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
TRS8E65H,S1Q G3 SIC-SBD 650V 8A TO-220-2L Toshiba Semiconductor and Storage	338	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
FFSD1065B DIODE SIL CARB 650V 13.5A DPAK onsemi	4,116	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SE30124-M3/I 30A,1200V,DO-218AB RECTIFIER Vishay	3,000	-	RFQ	Datasheet	-	DO-218AB	Tape & Reel (TR)	Active	Standard	1200 V	4.2A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	35pF @ 400V, 1MHz	-	-	Surface Mount	DO-218AB	-55°C ~ 175°C
VS-20ETF12FP-M3 DIODE GP 1.2KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division	695	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220-2 Full Pack	-40°C ~ 150°C
BSDD08G65E2 DIODE SCHOT SIC 650V 8A TO252 Bourns Inc.	5,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SIT10C065 DIODE SIL CARB 650V 10A TO220AC Diotec Semiconductor	980	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
VS-APU3006HN3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	492	-	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AC	-40°C ~ 150°C
PCDF0465G1_T0_00601 650V/4A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	160pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSM0865B DIODE SIL CARB 650V 11.6A 4PQFN onsemi	2,980	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11.6A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
SDS065J008C3-ISATH DIODE 650V-8A TO220-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	25A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-20ETF04STRL-M3 DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division	7,894	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	400 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 400 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
PCDD0465GB_L2_00601 650V/4A IN TO-252AA PACKAGE SILI Panjit International Inc.	3,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	261pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
TRS10V65H,LQ G3 SIC-SBD 650V 10A DFN8X8 Toshiba Semiconductor and Storage	3,975	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
IDWD30E120D7XKSA1 DIODE GEN PURP 1200V 52A TO247-2 Infineon Technologies	120	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	52A	3 V @ 30 A	Fast Recovery =< 500ns, > 5A (Io)	135 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
D6015L52TP DIODE GP 600V 9.5A ITO220AB Littelfuse Inc.	457	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	9.5A	1.6 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 600 V	-	-	-	Through Hole	ITO-220AB	-40°C ~ 125°C
SIT12C065 DIODE SIL CARB 650V 12A TO220AC Diotec Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
IDWD20E65E7XKSA1 HOME APPLIANCES 14 Infineon Technologies	220	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	42A	2.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	74 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.