Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RFUH20TJ6SFHGC9 SUPER FAST RECOVERY DIODE : RFUH Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	220 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
TRS12V65H,LQ G3 SIC-SBD 650V 12A DFN8X8 Toshiba Semiconductor and Storage	4,472	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	778pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
SDS120J005C3-ISATH DIODE 1200V-5A TO220-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	22A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	400pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-3C10EV07T-M3/I SIC-G3-SLIMDPAK 2L Vishay General Semiconductor - Diodes Division	4,391	-	RFQ	Datasheet	eSMP®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	445pF @ 1V, 1MHz	-	-	Surface Mount	SlimDPAK	-55°C ~ 175°C
S6D20065A DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	250	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	61A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	1650pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
S3D15065I DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	990	-	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	42A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 650 V	1243pF @ 0V, 1MHz	-	-	Through Hole	TO-220-Isolation	-55°C ~ 175°C
SDS065J010D3-ISARH DIODE 650V-10A TO252-2L Luminus Devices Inc.	300	-	RFQ	Datasheet	Sanan TO263	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	556pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
S3D15065H DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	42A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 650 V	1243pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
TRS12E65H,S1Q G3 SIC-SBD 650V 12A TO-220-2L Toshiba Semiconductor and Storage	370	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	778pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
BSDD10G65E2 DIODE SCHOT SIC 650V 10A TO252 Bourns Inc.	9,660	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	323pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
IDWD50E120D7XKSA1 DIODE GEN PURP 1200V 81A TO247-2 Infineon Technologies	230	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	81A	3 V @ 50 A	Fast Recovery =< 500ns, > 5A (Io)	160 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SDS065J010C3-ISATH DIODE 650V-10A TO220-2L Luminus Devices Inc.	290	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	556pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
SDS120J010C3-ISATH DIODE 1200V-10A TO220-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
FFSB0665A DIODE SIL CARB 650V 9A D2PAK-3 onsemi	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	9A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
FFSP2065B DIODE SIL CARB 650V 22.5A TO220 onsemi	397	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	22.5A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
SDS065J010E3-ISARH DIODE 650V-10A TO263-2L Luminus Devices Inc.	300	-	RFQ	Datasheet	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	556pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C
BSDH10G120E2 DIODE SIC 1200V 10A TO220-2 Bourns Inc.	2,929	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
PCDP0465GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,931	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
IDK08G65C5XTMA2 DIODE SIL CARB 650V 8A TO263-2 Infineon Technologies	959	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	-	250pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
FFSD1065B-F085 DIODE SIL CARB 650V 13.5A DPAK onsemi	1,968	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.