Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDWD120E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	210	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	150A	2.1 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-65EPS16L-M3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	184	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
C6D08065E-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	2,370	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C6D08065G-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	2,300	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
C3D08065E-TR DIODE SIL CARB 650V 25.5A TO252 Wolfspeed, Inc.	2,190	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	25.5A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
STPSC12065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	749	-	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
SDS120J010D3-ISARH DIODE 1200V-10A TO252-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
BSDD10S65E6 DIODE SCHOT SIC 650V 10A TO252 Bourns Inc.	4,995	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDB10S65E6 DIODE SCHOT SIC 650V 10A TO263 Bourns Inc.	3,170	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
BSDL10S65E6 DIODE SIC SCHTKY 650V 10A DFN8X8 Bourns Inc.	2,697	-	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
FFSM1265A DIODE SIL CARB 650V 12.5A 4PQFN onsemi	2,585	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12.5A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
PSC1065KQ PSC1065K/SOT8021/TO220-2L Nexperia USA Inc.	974	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	175°C
IDWD60E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	187	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 60 A	Fast Recovery =< 500ns, > 5A (Io)	99 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E120D7XKSA1 DIODE GEN PURP 1200V 116A TO247 Infineon Technologies	235	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	116A	3 V @ 75 A	Fast Recovery =< 500ns, > 5A (Io)	195 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-3C05ET12S2L-M3 5A 1200V SIC ZERO QRR SINGLE TJM Vishay General Semiconductor - Diodes Division	796	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
IDWD75E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	210	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SDS065J012S3-ISARH DIODE 650V-12A DFN8*8-4L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	651pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
PCDP0865GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
APT60D120SG DIODE GEN PURP 1.2KV 60A D3 Microchip Technology	156	-	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	250 µA @ 1200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
FFSB2065B DIODE SIL CARB 650V 22.8A D2PAK onsemi	2,178	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	22.8A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.