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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPH9R00CQ5,LQ Toshiba Semiconductor and Storage

TPH9R00CQ5,LQ

150V U-MOS X-H SOP-ADVANCE(N) 9M

Toshiba Semiconductor and Storage

10 -
Datasheet U-MOSX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 64A (Tc) 8V, 10V 9mOhm @ 32A, 10V 4.5V @ 1mA 44 nC @ 10 V ±20V 5400 pF @ 75 V - 210W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
TK055U60Z1,RQ Toshiba Semiconductor and Storage

TK055U60Z1,RQ

600V DTMOS VI TOLL 55MOHM

Toshiba Semiconductor and Storage

5,820 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Ta) 10V 55mOhm @ 15A, 10V 4V @ 1.69mA 65 nC @ 10 V ±30V 3680 pF @ 300 V - 270W (Tc) 150°C - - Surface Mount TOLL
SSM3K335R,LF Toshiba Semiconductor and Storage

SSM3K335R,LF

MOSFET N CH 30V 6A SOT-23F

Toshiba Semiconductor and Storage

2,904 -
Datasheet U-MOSVII-H SOT-23-3 Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 38mOhm @ 4A, 10V 2.5V @ 100µA 2.7 nC @ 4.5 V ±20V 340 pF @ 15 V - 1W (Ta) 150°C (TJ) - - Surface Mount SOT-23F
TK110A10PL,S4X Toshiba Semiconductor and Storage

TK110A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

9,736 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4.5V, 10V 10.8mOhm @ 18A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 36W (Tc) 175°C - - Through Hole TO-220SIS
TPH1R405PL,L1Q Toshiba Semiconductor and Storage

TPH1R405PL,L1Q

MOSFET N-CH 45V 120A 8SOP

Toshiba Semiconductor and Storage

6,452 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 120A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2.4V @ 500µA 74 nC @ 10 V ±20V 6300 pF @ 22.5 V - 960mW (Ta), 132W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
TK16A60W5,S4VX Toshiba Semiconductor and Storage

TK16A60W5,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage

11 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4K1A60F,S4X Toshiba Semiconductor and Storage

TK4K1A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

7 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.1Ohm @ 1A, 10V 4V @ 190µA 8 nC @ 10 V ±30V 270 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
TK40E06N1,S1X Toshiba Semiconductor and Storage

TK40E06N1,S1X

MOSFET N-CH 60V 40A TO220

Toshiba Semiconductor and Storage

23 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 10V 10.4mOhm @ 20A, 10V 4V @ 300µA 23 nC @ 10 V ±20V 1700 pF @ 30 V - 67W (Tc) 150°C (TJ) - - Through Hole TO-220
TK1K2A60F,S4X Toshiba Semiconductor and Storage

TK1K2A60F,S4X

MOSFET N-CH 600V 6A TO220SIS

Toshiba Semiconductor and Storage

6,491 -
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.2Ohm @ 3A, 10V 4V @ 630µA 21 nC @ 10 V ±30V 740 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK6R8A08QM,S4X Toshiba Semiconductor and Storage

TK6R8A08QM,S4X

UMOS10 TO-220SIS 80V 6.8MOHM

Toshiba Semiconductor and Storage

19 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 58A (Tc) 6V, 10V 6.8mOhm @ 29A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 41W (Tc) 175°C - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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