REFINED COMPONENT RESULTS

FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK110E10PL,S1X Toshiba Semiconductor and Storage

TK110E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,429 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 10.7mOhm @ 21A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 87W (Tc) 175°C - - Through Hole TO-220
TK22A10N1,S4X Toshiba Semiconductor and Storage

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage

1 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK42A12N1,S4X Toshiba Semiconductor and Storage

TK42A12N1,S4X

MOSFET N-CH 120V 42A TO220SIS

Toshiba Semiconductor and Storage

9,325 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 42A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK11A65W,S5X Toshiba Semiconductor and Storage

TK11A65W,S5X

MOSFET N-CH 650V 11.1A TO220SIS

Toshiba Semiconductor and Storage

6 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 390mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK32E12N1,S1X Toshiba Semiconductor and Storage

TK32E12N1,S1X

MOSFET N CH 120V 60A TO-220

Toshiba Semiconductor and Storage

5,659 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 60A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 98W (Tc) 150°C (TJ) - - Through Hole TO-220
TK5R3E08QM,S1X Toshiba Semiconductor and Storage

TK5R3E08QM,S1X

UMOS10 TO-220AB 80V 5.3MOHM

Toshiba Semiconductor and Storage

6 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 5.3mOhm @ 50A, 10V 3.5V @ 700µA 55 nC @ 10 V ±20V 3980 pF @ 40 V - 150W (Tc) 175°C - - Through Hole TO-220
TK3R3A06PL,S4X Toshiba Semiconductor and Storage

TK3R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

6,374 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 40A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 6A TO220SIS

Toshiba Semiconductor and Storage

20 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Ta) 10V 1.11Ohm @ 3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK290A65Y,S4X Toshiba Semiconductor and Storage

TK290A65Y,S4X

MOSFET N-CH 650V 11.5A TO220SIS

Toshiba Semiconductor and Storage

3,566 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK9A90E,S4X Toshiba Semiconductor and Storage

TK9A90E,S4X

MOSFET N-CH 900V 9A TO220SIS

Toshiba Semiconductor and Storage

24 -
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
Total 814 Record«Prev1... 3637383940414243...82Next»

FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.

PART SELECTION SUPPORT

Need Help Finding the Right FETs, MOSFETs?

Send your target specifications, preferred brand, reference part number and quantity. Our team can help review matching options, stock availability and quotation details.

Egoo Store Egoo Store BOM BOM Cart My Inquiry Account My Account