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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK3R9E10PL,S1X Toshiba Semiconductor and Storage

TK3R9E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,271 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 50A, 10V 2.5V @ 1mA 96 nC @ 10 V ±20V 6320 pF @ 50 V - 230W (Tc) 175°C - - Through Hole TO-220
TK10A80E,S4X Toshiba Semiconductor and Storage

TK10A80E,S4X

MOSFET N-CH 800V 10A TO220SIS

Toshiba Semiconductor and Storage

9,697 -
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7J90E,S1E Toshiba Semiconductor and Storage

TK7J90E,S1E

MOSFET N-CH 900V 7A TO3P

Toshiba Semiconductor and Storage

22 -
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK100A06N1,S4X Toshiba Semiconductor and Storage

TK100A06N1,S4X

MOSFET N-CH 60V 100A TO220SIS

Toshiba Semiconductor and Storage

6,673 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 2.7mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK72A12N1,S4X Toshiba Semiconductor and Storage

TK72A12N1,S4X

MOSFET N-CH 120V 72A TO220SIS

Toshiba Semiconductor and Storage

5,341 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Tc) 10V 4.5mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage

TJ200F04M3L,LXHQ

MOSFET P-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage

7,070 -
Datasheet U-MOSVI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 1.8mOhm @ 100A, 10V 3V @ 1mA 460 nC @ 10 V +10V, -20V 1280 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK20E60W5,S1VX Toshiba Semiconductor and Storage

TK20E60W5,S1VX

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

17 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C - - Through Hole TO-220
TK100A10N1,S4X Toshiba Semiconductor and Storage

TK100A10N1,S4X

MOSFET N-CH 100V 100A TO220SIS

Toshiba Semiconductor and Storage

17 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 3.8mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 8800 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK39N60W,S1VF Toshiba Semiconductor and Storage

TK39N60W,S1VF

MOSFET N CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

20 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK065N65Z,S1F Toshiba Semiconductor and Storage

TK065N65Z,S1F

MOSFET N-CH 650V 38A TO247

Toshiba Semiconductor and Storage

19 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247
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FETs, MOSFETs FAQ

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