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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK290A60Y,S4X Toshiba Semiconductor and Storage

TK290A60Y,S4X

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

7,408 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A60W,S4VX Toshiba Semiconductor and Storage

TK5A60W,S4VX

MOSFET N-CH 600V 5.4A TO220SIS

Toshiba Semiconductor and Storage

9,011 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK1K7A60F,S4X Toshiba Semiconductor and Storage

TK1K7A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

1 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4V @ 460µA 16 nC @ 10 V ±30V 560 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK3R2A08QM,S4X Toshiba Semiconductor and Storage

TK3R2A08QM,S4X

UMOS10 TO-220SIS 80V 3.2MOHM

Toshiba Semiconductor and Storage

8,113 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 92A (Tc) 6V, 10V 3.2mOhm @ 46A, 10V 3.5V @ 1.3mA 102 nC @ 10 V ±20V 7670 pF @ 40 V - 45W (Tc) 175°C - - Through Hole TO-220SIS
TK3A60DA(Q,M) Toshiba Semiconductor and Storage

TK3A60DA(Q,M)

MOSFET N-CH 600V 2.5A TO220SIS

Toshiba Semiconductor and Storage

1 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK58A06N1,S4X Toshiba Semiconductor and Storage

TK58A06N1,S4X

MOSFET N-CH 60V 58A TO220SIS

Toshiba Semiconductor and Storage

4,526 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK16E60W5,S1VX Toshiba Semiconductor and Storage

TK16E60W5,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage

4,002 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK560A65Y,S4X Toshiba Semiconductor and Storage

TK560A65Y,S4X

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage

5 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) - - Through Hole TO-220SIS
TK7P60W5,RVQ Toshiba Semiconductor and Storage

TK7P60W5,RVQ

MOSFET N-CH 600V 7A DPAK

Toshiba Semiconductor and Storage

3,950 -
Datasheet DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 670mOhm @ 3.5A, 10V 4.5V @ 350µA 16 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK12E80W,S1X Toshiba Semiconductor and Storage

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Toshiba Semiconductor and Storage

8,460 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 165W (Tc) 150°C - - Through Hole TO-220
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FETs, MOSFETs FAQ

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