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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK62N60W,S1VF Toshiba Semiconductor and Storage

TK62N60W,S1VF

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage

8,182 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C (TJ) - - Through Hole TO-247
TK100L60W,VQ Toshiba Semiconductor and Storage

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

Toshiba Semiconductor and Storage

3 -
Datasheet DTMOSIV TO-3PL Tube Active N-Channel MOSFET (Metal Oxide) 600 V 100A (Tc) 10V 18mOhm @ 50A, 10V 3.7V @ 5mA 360 nC @ 10 V ±30V 15000 pF @ 30 V - 797W (Tc) 150°C (TJ) - - Through Hole TO-3P(L)
SSM6J213FE(TE85L,F Toshiba Semiconductor and Storage

SSM6J213FE(TE85L,F

MOSFET P CH 20V 2.6A ES6

Toshiba Semiconductor and Storage

8,793 -
Datasheet U-MOSVI SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount ES6
SSM5H08TU,LF Toshiba Semiconductor and Storage

SSM5H08TU,LF

MOSFET N-CH 20V 1.5A UFV

Toshiba Semiconductor and Storage

2 -
Datasheet U-MOSIII 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4V 160mOhm @ 750mA, 4V 1.1V @ 100µA - ±12V 125 pF @ 10 V Schottky Diode (Isolated) 500mW (Ta) 150°C - - Surface Mount UFV
TK2K2A60F,S4X Toshiba Semiconductor and Storage

TK2K2A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,328 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4V @ 350µA 13 nC @ 10 V ±30V 450 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
TK1K9A60F,S4X Toshiba Semiconductor and Storage

TK1K9A60F,S4X

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage

4,302 -
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 1.9Ohm @ 1.9A, 10V 4V @ 400µA 14 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
SSM6J212FE,LF Toshiba Semiconductor and Storage

SSM6J212FE,LF

MOSFET P-CH 20V 4A ES6

Toshiba Semiconductor and Storage

7,347 -
Datasheet U-MOSVI SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 40.7mOhm @ 3A, 4.5V 1V @ 1mA 14.1 nC @ 4.5 V ±8V 970 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount ES6
SSM3J140TU,LXHF Toshiba Semiconductor and Storage

SSM3J140TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage

5,613 -
Datasheet U-MOSVI 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.5V, 4.5V 25.8mOhm @ 4A, 4.5V 1V @ 1mA 24.8 nC @ 4.5 V +6V, -8V 1800 pF @ 10 V - 500mW (Ta) 150°C Automotive AEC-Q101 Surface Mount UFM
TK58E06N1,S1X Toshiba Semiconductor and Storage

TK58E06N1,S1X

MOSFET N-CH 60V 58A TO220

Toshiba Semiconductor and Storage

8,657 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-220
TK34A10N1,S4X Toshiba Semiconductor and Storage

TK34A10N1,S4X

MOSFET N-CH 100V 34A TO220SIS

Toshiba Semiconductor and Storage

6,833 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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